TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Schaaf, P
AU  - Huang, YL
AU  - Seibt, M
AU  - Homewood, Kevin P.
AU  - McKinty, C
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6340
AB  - This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing
VL  - 158
SP  - 198
EP  - 202
DO  - 10.1016/S0257-8972(02)00205-0
ER  - 

@article{
author = "Bibić, Nataša M. and Dhar, S and Lieb, KP and Milosavljević, Momir and Schaaf, P and Huang, YL and Seibt, M and Homewood, Kevin P. and McKinty, C",
year = "2002",
abstract = "This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing",
volume = "158",
pages = "198-202",
doi = "10.1016/S0257-8972(02)00205-0"
}

Bibić, N. M., Dhar, S., Lieb, K., Milosavljević, M., Schaaf, P., Huang, Y., Seibt, M., Homewood, K. P.,& McKinty, C.. (2002). Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology, 158, 198-202.
https://doi.org/10.1016/S0257-8972(02)00205-0

Bibić NM, Dhar S, Lieb K, Milosavljević M, Schaaf P, Huang Y, Seibt M, Homewood KP, McKinty C. Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology. 2002;158:198-202.
doi:10.1016/S0257-8972(02)00205-0 .

Bibić, Nataša M., Dhar, S, Lieb, KP, Milosavljević, Momir, Schaaf, P, Huang, YL, Seibt, M, Homewood, Kevin P., McKinty, C, "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing" in Surface and Coatings Technology, 158 (2002):198-202,
https://doi.org/10.1016/S0257-8972(02)00205-0 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Dhar, S
AU  - Schaaf, P
AU  - Bibić, Nataša M.
AU  - Huang, YL
AU  - Seibt, M
AU  - Lieb, KP
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2470
AB  - A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.
T2  - Journal of Applied Physics
T1  - Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers
VL  - 90
IS  - 9
SP  - 4474
EP  - 4484
DO  - 10.1063/1.1405818
ER  - 

@article{
author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Huang, YL and Seibt, M and Lieb, KP",
year = "2001",
abstract = "A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.",
journal = "Journal of Applied Physics",
title = "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers",
volume = "90",
number = "9",
pages = "4474-4484",
doi = "10.1063/1.1405818"
}

Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Huang, Y., Seibt, M.,& Lieb, K.. (2001). Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics, 90(9), 4474-4484.
https://doi.org/10.1063/1.1405818

Milosavljević M, Dhar S, Schaaf P, Bibić NM, Huang Y, Seibt M, Lieb K. Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics. 2001;90(9):4474-4484.
doi:10.1063/1.1405818 .

Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Huang, YL, Seibt, M, Lieb, KP, "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers" in Journal of Applied Physics, 90, no. 9 (2001):4474-4484,
https://doi.org/10.1063/1.1405818 . .