TY  - JOUR
AU  - Popovic, N.
AU  - Bogdanov, Žarko
AU  - Goncić, Bratislav
AU  - Štrbac, Svetlana
AU  - Rakočević, Zlatko Lj.
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3610
AB  - Nickel thin films were deposited on glass substrates at different N-2 gas contents using a dc triode sputtering deposition system. Triode configuration was used to deposit nanostructured thin films with preferred orientation at lower gas pressure and at lower substrate temperature compared to the dc diode sputtering system. A gradual evolution in the composition of the films from Ni, Ni(N), to Ni3N was found by X-ray diffraction analysis. The preferred growth orientation of the nanostructured Ni films changed from (1 1 1) to (1 0 0) for 9% N-2 at 100 degrees C. Ni3N films were formed at 23% N-2 with a particle size of about 65 nm, while for 0% and 9% of nitrogen, the particles sizes were 60 nm, and 37 nm, respectively, as obtained by atomic force microscopy. Magnetic force microscopy imaging showed that the local magnetic structure changed from disordered stripe domains of about 200 nm for Ni and Ni(N) to a structure without a magnetic contrast, indicating the paramagnetic state of this material, which confirmed the structural transformation from Ni to Ni3N. (C) 2008 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties
VL  - 255
IS  - 7
SP  - 4027
EP  - 4032
DO  - 10.1016/j.apsusc.2008.10.076
ER  - 

@article{
author = "Popovic, N. and Bogdanov, Žarko and Goncić, Bratislav and Štrbac, Svetlana and Rakočević, Zlatko Lj.",
year = "2009",
abstract = "Nickel thin films were deposited on glass substrates at different N-2 gas contents using a dc triode sputtering deposition system. Triode configuration was used to deposit nanostructured thin films with preferred orientation at lower gas pressure and at lower substrate temperature compared to the dc diode sputtering system. A gradual evolution in the composition of the films from Ni, Ni(N), to Ni3N was found by X-ray diffraction analysis. The preferred growth orientation of the nanostructured Ni films changed from (1 1 1) to (1 0 0) for 9% N-2 at 100 degrees C. Ni3N films were formed at 23% N-2 with a particle size of about 65 nm, while for 0% and 9% of nitrogen, the particles sizes were 60 nm, and 37 nm, respectively, as obtained by atomic force microscopy. Magnetic force microscopy imaging showed that the local magnetic structure changed from disordered stripe domains of about 200 nm for Ni and Ni(N) to a structure without a magnetic contrast, indicating the paramagnetic state of this material, which confirmed the structural transformation from Ni to Ni3N. (C) 2008 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties",
volume = "255",
number = "7",
pages = "4027-4032",
doi = "10.1016/j.apsusc.2008.10.076"
}

Popovic, N., Bogdanov, Ž., Goncić, B., Štrbac, S.,& Rakočević, Z. Lj.. (2009). Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties. in Applied Surface Science, 255(7), 4027-4032.
https://doi.org/10.1016/j.apsusc.2008.10.076

Popovic N, Bogdanov Ž, Goncić B, Štrbac S, Rakočević ZL. Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties. in Applied Surface Science. 2009;255(7):4027-4032.
doi:10.1016/j.apsusc.2008.10.076 .

Popovic, N., Bogdanov, Žarko, Goncić, Bratislav, Štrbac, Svetlana, Rakočević, Zlatko Lj., "Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties" in Applied Surface Science, 255, no. 7 (2009):4027-4032,
https://doi.org/10.1016/j.apsusc.2008.10.076 . .

TY  - JOUR
AU  - Rakočević, Zlatko Lj.
AU  - Popovic, N.
AU  - Bogdanov, Žarko
AU  - Goncić, Bratislav
AU  - Štrbac, Svetlana
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3480
AB  - Nickel was sputter deposited on a glass with a thin film thickness of 600 nm under either in an argon atmosphere or under a partial pressure of nitrogen of either 1.3x10(-4) or 4x10(-4) mbar. Atomic force microscopy and scanning surface potential microscopy (SSPM) were used to study the morphology and to estimate the surface resistivity of the obtained Ni thin films taking into account surface-roughness effects. For the three samples investigated, the surface resistivity values as estimated using SSPM were in good agreement with the results obtained by standard four-point probe measurements. (c) 2008 American Institute of Physics.
T2  - Review of Scientific Instruments
T1  - Surface resistivity estimation by scanning surface potential microscopy
VL  - 79
IS  - 6
DO  - 10.1063/1.2937647
ER  - 

@article{
author = "Rakočević, Zlatko Lj. and Popovic, N. and Bogdanov, Žarko and Goncić, Bratislav and Štrbac, Svetlana",
year = "2008",
abstract = "Nickel was sputter deposited on a glass with a thin film thickness of 600 nm under either in an argon atmosphere or under a partial pressure of nitrogen of either 1.3x10(-4) or 4x10(-4) mbar. Atomic force microscopy and scanning surface potential microscopy (SSPM) were used to study the morphology and to estimate the surface resistivity of the obtained Ni thin films taking into account surface-roughness effects. For the three samples investigated, the surface resistivity values as estimated using SSPM were in good agreement with the results obtained by standard four-point probe measurements. (c) 2008 American Institute of Physics.",
journal = "Review of Scientific Instruments",
title = "Surface resistivity estimation by scanning surface potential microscopy",
volume = "79",
number = "6",
doi = "10.1063/1.2937647"
}

Rakočević, Z. Lj., Popovic, N., Bogdanov, Ž., Goncić, B.,& Štrbac, S.. (2008). Surface resistivity estimation by scanning surface potential microscopy. in Review of Scientific Instruments, 79(6).
https://doi.org/10.1063/1.2937647

Rakočević ZL, Popovic N, Bogdanov Ž, Goncić B, Štrbac S. Surface resistivity estimation by scanning surface potential microscopy. in Review of Scientific Instruments. 2008;79(6).
doi:10.1063/1.2937647 .

Rakočević, Zlatko Lj., Popovic, N., Bogdanov, Žarko, Goncić, Bratislav, Štrbac, Svetlana, "Surface resistivity estimation by scanning surface potential microscopy" in Review of Scientific Instruments, 79, no. 6 (2008),
https://doi.org/10.1063/1.2937647 . .

TY  - CONF
AU  - Bogdanov, Žarko
AU  - Popovic, N.
AU  - Zlatanovic, M.
AU  - Goncić, Bratislav
AU  - Rakočević, Zlatko Lj.
AU  - Zec, Slavica
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6692
AB  - The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N-2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (V-acc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I-220/d), lattice spacing (d(220)) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with V-acc, nearly constant (220) peak broadening with the increase of N-2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.
C3  - Materials Science Forum
T1  - Nano-structured TiN thin films deposited by single ion beam reactive sputtering
VL  - 555
SP  - 303
EP  - +
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6692
ER  - 

@conference{
author = "Bogdanov, Žarko and Popovic, N. and Zlatanovic, M. and Goncić, Bratislav and Rakočević, Zlatko Lj. and Zec, Slavica",
year = "2007",
abstract = "The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N-2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (V-acc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I-220/d), lattice spacing (d(220)) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with V-acc, nearly constant (220) peak broadening with the increase of N-2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.",
journal = "Materials Science Forum",
title = "Nano-structured TiN thin films deposited by single ion beam reactive sputtering",
volume = "555",
pages = "303-+",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6692"
}

Bogdanov, Ž., Popovic, N., Zlatanovic, M., Goncić, B., Rakočević, Z. Lj.,& Zec, S.. (2007). Nano-structured TiN thin films deposited by single ion beam reactive sputtering. in Materials Science Forum, 555, 303-+.
https://hdl.handle.net/21.15107/rcub_vinar_6692

Bogdanov Ž, Popovic N, Zlatanovic M, Goncić B, Rakočević ZL, Zec S. Nano-structured TiN thin films deposited by single ion beam reactive sputtering. in Materials Science Forum. 2007;555:303-+.
https://hdl.handle.net/21.15107/rcub_vinar_6692 .

Bogdanov, Žarko, Popovic, N., Zlatanovic, M., Goncić, Bratislav, Rakočević, Zlatko Lj., Zec, Slavica, "Nano-structured TiN thin films deposited by single ion beam reactive sputtering" in Materials Science Forum, 555 (2007):303-+,
https://hdl.handle.net/21.15107/rcub_vinar_6692 .

TY  - JOUR
AU  - Popovic, N
AU  - Bogdanov, Žarko
AU  - Goncić, Bratislav
AU  - Zec, Slavica
AU  - Rakočević, Zlatko Lj.
AU  - Zlatanovic, M
AU  - Peruško, Davor
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6452
AB  - The low energy broad argon ion beam (1.35-2.0) keV was used for sputtering of a Ti target in an atmosphere of nitrogen gas to form TiN films. During deposition the growing thin film was under argon ion irradiation from the beam periphery. The influence of the ion beam energy (E-b) and average energy delivered by assisting ions to condensing film atoms (E-n) on TiN film properties was investigated. The titanium nitride thin films were deposited at a low working pressure of 1 x 10(-4) mbar and at ambient substrate temperature. XRD analysis revealed the formation of a delta-TiN phase with preferred (220) orientation for the stoichiometric composition of TiN films (RBS). The increase of both the intensity of the (220) peak and TiN film crystallite dimension with increasing the energy of Ti target bombarding Ar+ ions (E-b) was observed. By increasing the average ion energy per deposited metal atom (E-n) the (220) peak intensity and crystallite dimension decrease and a complete loss of (220) orientation at E-n close to 162 eV/at was found. In the range of E-n considered, the TiN films grain size decreases leading to the nanostructured surface as revealed by the STM analysis. The incident angle and energy of the assisted bombarding strongly influence the film-preferred orientation and sub-microstructure. (C) 2003 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - TiN thin films deposited by ion beam sputtering: effects of energetic particles bombardment
VL  - 459
IS  - 1-2
SP  - 286
EP  - 291
DO  - 10.1016/j.tsf.2003.12.130
ER  - 

@article{
author = "Popovic, N and Bogdanov, Žarko and Goncić, Bratislav and Zec, Slavica and Rakočević, Zlatko Lj. and Zlatanovic, M and Peruško, Davor",
year = "2004",
abstract = "The low energy broad argon ion beam (1.35-2.0) keV was used for sputtering of a Ti target in an atmosphere of nitrogen gas to form TiN films. During deposition the growing thin film was under argon ion irradiation from the beam periphery. The influence of the ion beam energy (E-b) and average energy delivered by assisting ions to condensing film atoms (E-n) on TiN film properties was investigated. The titanium nitride thin films were deposited at a low working pressure of 1 x 10(-4) mbar and at ambient substrate temperature. XRD analysis revealed the formation of a delta-TiN phase with preferred (220) orientation for the stoichiometric composition of TiN films (RBS). The increase of both the intensity of the (220) peak and TiN film crystallite dimension with increasing the energy of Ti target bombarding Ar+ ions (E-b) was observed. By increasing the average ion energy per deposited metal atom (E-n) the (220) peak intensity and crystallite dimension decrease and a complete loss of (220) orientation at E-n close to 162 eV/at was found. In the range of E-n considered, the TiN films grain size decreases leading to the nanostructured surface as revealed by the STM analysis. The incident angle and energy of the assisted bombarding strongly influence the film-preferred orientation and sub-microstructure. (C) 2003 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "TiN thin films deposited by ion beam sputtering: effects of energetic particles bombardment",
volume = "459",
number = "1-2",
pages = "286-291",
doi = "10.1016/j.tsf.2003.12.130"
}

Popovic, N., Bogdanov, Ž., Goncić, B., Zec, S., Rakočević, Z. Lj., Zlatanovic, M.,& Peruško, D.. (2004). TiN thin films deposited by ion beam sputtering: effects of energetic particles bombardment. in Thin Solid Films, 459(1-2), 286-291.
https://doi.org/10.1016/j.tsf.2003.12.130

Popovic N, Bogdanov Ž, Goncić B, Zec S, Rakočević ZL, Zlatanovic M, Peruško D. TiN thin films deposited by ion beam sputtering: effects of energetic particles bombardment. in Thin Solid Films. 2004;459(1-2):286-291.
doi:10.1016/j.tsf.2003.12.130 .

Popovic, N, Bogdanov, Žarko, Goncić, Bratislav, Zec, Slavica, Rakočević, Zlatko Lj., Zlatanovic, M, Peruško, Davor, "TiN thin films deposited by ion beam sputtering: effects of energetic particles bombardment" in Thin Solid Films, 459, no. 1-2 (2004):286-291,
https://doi.org/10.1016/j.tsf.2003.12.130 . .

TY  - JOUR
AU  - Goncić, Bratislav
AU  - Popovic, N
AU  - Bogdanov, Žarko
AU  - Zec, Slavica
AU  - Zlatanovic, M
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6350
AB  - The method and parameters of TiN film deposition processes are of dominant influence on the film growth microstructure and its physical properties. One of the PVD methods is the low energy ion beam reactive sputter deposition that offers the changes in the film properties by means of changing the beam parameters such as energy, divergence and current density. In this work, a laboratory made, broad beam, argon ion source was used for the reactive sputter deposition of TiN, thin films onto the glass substrates at ambient temperature. At constant argon beam energy (2keV), partial pressure of nitrogen (up to 6.6x10(-6) mbar), the substrate ion current and residual gas pressure were changed. The film deposition rate and thickness were controlled in situ by means of a light sensitive device placed on the rear side of the glass substrate. The physical properties of films: color, electrical resistivity and grain size, were correlated with the deposition parameters. High energy ion bombardment of growing film, relatively small ion to atom flux ratio up to 0.04, and low working pressure of 10(-5) mbar enabled the formation of a strong (220) preferred orientation rarely obtained for TiNx thin films.
T2  - Materials Science Forum
T1  - Low-energy broad-beam sputter deposition of TiNx thin films
VL  - 413
SP  - 159
EP  - 164
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6350
ER  - 

@article{
author = "Goncić, Bratislav and Popovic, N and Bogdanov, Žarko and Zec, Slavica and Zlatanovic, M",
year = "2003",
abstract = "The method and parameters of TiN film deposition processes are of dominant influence on the film growth microstructure and its physical properties. One of the PVD methods is the low energy ion beam reactive sputter deposition that offers the changes in the film properties by means of changing the beam parameters such as energy, divergence and current density. In this work, a laboratory made, broad beam, argon ion source was used for the reactive sputter deposition of TiN, thin films onto the glass substrates at ambient temperature. At constant argon beam energy (2keV), partial pressure of nitrogen (up to 6.6x10(-6) mbar), the substrate ion current and residual gas pressure were changed. The film deposition rate and thickness were controlled in situ by means of a light sensitive device placed on the rear side of the glass substrate. The physical properties of films: color, electrical resistivity and grain size, were correlated with the deposition parameters. High energy ion bombardment of growing film, relatively small ion to atom flux ratio up to 0.04, and low working pressure of 10(-5) mbar enabled the formation of a strong (220) preferred orientation rarely obtained for TiNx thin films.",
journal = "Materials Science Forum",
title = "Low-energy broad-beam sputter deposition of TiNx thin films",
volume = "413",
pages = "159-164",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6350"
}

Goncić, B., Popovic, N., Bogdanov, Ž., Zec, S.,& Zlatanovic, M.. (2003). Low-energy broad-beam sputter deposition of TiNx thin films. in Materials Science Forum, 413, 159-164.
https://hdl.handle.net/21.15107/rcub_vinar_6350

Goncić B, Popovic N, Bogdanov Ž, Zec S, Zlatanovic M. Low-energy broad-beam sputter deposition of TiNx thin films. in Materials Science Forum. 2003;413:159-164.
https://hdl.handle.net/21.15107/rcub_vinar_6350 .

Goncić, Bratislav, Popovic, N, Bogdanov, Žarko, Zec, Slavica, Zlatanovic, M, "Low-energy broad-beam sputter deposition of TiNx thin films" in Materials Science Forum, 413 (2003):159-164,
https://hdl.handle.net/21.15107/rcub_vinar_6350 .

TY  - JOUR
AU  - Popovic, N
AU  - Bogdanov, Žarko
AU  - Goncić, Bratislav
AU  - Zec, Slavica
AU  - Rakočević, Zlatko Lj.
PY  - 1999
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6271
AB  - Nickel films were deposited from a vapour phase (e-gun source) onto amorphous glass substrates at room temperature during a simultaneous bombardment with nitrogen ions at low pressure (4 x 10(-2) Pa). Under a constant partial pressure of nitrogen and negative substrate bias voltages the effect of bombardment intensity on the texture and morphology of Ni films (about 1 mu m) has been investigated by XRD and STM methods. The films under investigation exhibit a Variable degree of (200) preferred orientation by changing the ion to atom flux ratio (IAR) from 0.03 to 0.3. It was found that complete (200) texture was achieved for an IAR of about 0.1 and that further increase of IAR induces the decrease of preferred orientation. X-ray diffraction in combination with profiling by a 1 keV argon ion beam bombardment has been used for in depth texture and grain size analysis. It has been shown that oriented growth, grain size and morphology correlate with changes of bombardment intensity during the deposition as well as with the substrate bias potential. (C) 1999 Elsevier Science S.A. All rights reserved.
T2  - Thin Solid Films
T1  - The influence of ion bombardment intensity during deposition on nickel films microstructure
VL  - 343
SP  - 75
EP  - 80
DO  - 10.1016/S0040-6090(98)01578-8
ER  - 

@article{
author = "Popovic, N and Bogdanov, Žarko and Goncić, Bratislav and Zec, Slavica and Rakočević, Zlatko Lj.",
year = "1999",
abstract = "Nickel films were deposited from a vapour phase (e-gun source) onto amorphous glass substrates at room temperature during a simultaneous bombardment with nitrogen ions at low pressure (4 x 10(-2) Pa). Under a constant partial pressure of nitrogen and negative substrate bias voltages the effect of bombardment intensity on the texture and morphology of Ni films (about 1 mu m) has been investigated by XRD and STM methods. The films under investigation exhibit a Variable degree of (200) preferred orientation by changing the ion to atom flux ratio (IAR) from 0.03 to 0.3. It was found that complete (200) texture was achieved for an IAR of about 0.1 and that further increase of IAR induces the decrease of preferred orientation. X-ray diffraction in combination with profiling by a 1 keV argon ion beam bombardment has been used for in depth texture and grain size analysis. It has been shown that oriented growth, grain size and morphology correlate with changes of bombardment intensity during the deposition as well as with the substrate bias potential. (C) 1999 Elsevier Science S.A. All rights reserved.",
journal = "Thin Solid Films",
title = "The influence of ion bombardment intensity during deposition on nickel films microstructure",
volume = "343",
pages = "75-80",
doi = "10.1016/S0040-6090(98)01578-8"
}

Popovic, N., Bogdanov, Ž., Goncić, B., Zec, S.,& Rakočević, Z. Lj.. (1999). The influence of ion bombardment intensity during deposition on nickel films microstructure. in Thin Solid Films, 343, 75-80.
https://doi.org/10.1016/S0040-6090(98)01578-8

Popovic N, Bogdanov Ž, Goncić B, Zec S, Rakočević ZL. The influence of ion bombardment intensity during deposition on nickel films microstructure. in Thin Solid Films. 1999;343:75-80.
doi:10.1016/S0040-6090(98)01578-8 .

Popovic, N, Bogdanov, Žarko, Goncić, Bratislav, Zec, Slavica, Rakočević, Zlatko Lj., "The influence of ion bombardment intensity during deposition on nickel films microstructure" in Thin Solid Films, 343 (1999):75-80,
https://doi.org/10.1016/S0040-6090(98)01578-8 . .

TY  - JOUR
AU  - Zlatanovic, M
AU  - Popovic, N
AU  - Bogdanov, Žarko
AU  - Belosevac, R
AU  - Kunosic, A
AU  - Goncić, Bratislav
PY  - 1998
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6235
AB  - Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion j(i) to deposited metal atom j(m) flux ratio j(i)/j(m) at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. (C) 1998 Elsevier Science S.A.
T2  - Thin Solid Films
T1  - Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration
VL  - 317
IS  - 1-2
SP  - 463
EP  - 467
DO  - 10.1016/S0040-6090(97)00557-9
ER  - 

@article{
author = "Zlatanovic, M and Popovic, N and Bogdanov, Žarko and Belosevac, R and Kunosic, A and Goncić, Bratislav",
year = "1998",
abstract = "Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion j(i) to deposited metal atom j(m) flux ratio j(i)/j(m) at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. (C) 1998 Elsevier Science S.A.",
journal = "Thin Solid Films",
title = "Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration",
volume = "317",
number = "1-2",
pages = "463-467",
doi = "10.1016/S0040-6090(97)00557-9"
}

Zlatanovic, M., Popovic, N., Bogdanov, Ž., Belosevac, R., Kunosic, A.,& Goncić, B.. (1998). Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration. in Thin Solid Films, 317(1-2), 463-467.
https://doi.org/10.1016/S0040-6090(97)00557-9

Zlatanovic M, Popovic N, Bogdanov Ž, Belosevac R, Kunosic A, Goncić B. Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration. in Thin Solid Films. 1998;317(1-2):463-467.
doi:10.1016/S0040-6090(97)00557-9 .

Zlatanovic, M, Popovic, N, Bogdanov, Žarko, Belosevac, R, Kunosic, A, Goncić, Bratislav, "Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration" in Thin Solid Films, 317, no. 1-2 (1998):463-467,
https://doi.org/10.1016/S0040-6090(97)00557-9 . .

TY  - JOUR
AU  - Popovic, N
AU  - Dimitrijevic, T
AU  - Bogdanov, Žarko
AU  - Goncić, Bratislav
AU  - Štrbac, Svetlana
AU  - Rakočević, Zlatko Lj.
PY  - 1997
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6226
AB  - The influence of nitrogen ion bombardment during e-beam triode ion plating of nickel on the microstructure and film orientation has been investigated. The deposition variables explored were the ion current density and deposition rate while the substrate temperature (ambient), partial pressure of nitrogen (3 x 10(-4) Torr) and substrate bias potential (4.5kV) were constant. The orientation and growth morphology change for films about 1 mu m thick were determined by XRD, SEM and STM method. The preferred orientation changes from (111) to nearly complete (200) as a function of ion to atom arrival ratio (IAR), and was independent of the substrate type (amorphous or monocrystalline). The ion beam bombardment of films after deposition enables the in depth determination of the nickel texture change during growth. For the highest IAR value the complete (200) texture was achieved at the beginning of deposition. The surface morphology (STM) and preferred orientation changes were correlated with ion to atom flux ratio and discussed on the basis of lowering the overall energy of the film. (C) 1997 Elsevier Science Ltd.
T2  - Vacuum
T1  - Nickel film orientation change by nitrogen ion bombardment during deposition
VL  - 48
IS  - 7-9
SP  - 705
EP  - 708
DO  - 10.1016/S0042-207X(97)00035-3
ER  - 

@article{
author = "Popovic, N and Dimitrijevic, T and Bogdanov, Žarko and Goncić, Bratislav and Štrbac, Svetlana and Rakočević, Zlatko Lj.",
year = "1997",
abstract = "The influence of nitrogen ion bombardment during e-beam triode ion plating of nickel on the microstructure and film orientation has been investigated. The deposition variables explored were the ion current density and deposition rate while the substrate temperature (ambient), partial pressure of nitrogen (3 x 10(-4) Torr) and substrate bias potential (4.5kV) were constant. The orientation and growth morphology change for films about 1 mu m thick were determined by XRD, SEM and STM method. The preferred orientation changes from (111) to nearly complete (200) as a function of ion to atom arrival ratio (IAR), and was independent of the substrate type (amorphous or monocrystalline). The ion beam bombardment of films after deposition enables the in depth determination of the nickel texture change during growth. For the highest IAR value the complete (200) texture was achieved at the beginning of deposition. The surface morphology (STM) and preferred orientation changes were correlated with ion to atom flux ratio and discussed on the basis of lowering the overall energy of the film. (C) 1997 Elsevier Science Ltd.",
journal = "Vacuum",
title = "Nickel film orientation change by nitrogen ion bombardment during deposition",
volume = "48",
number = "7-9",
pages = "705-708",
doi = "10.1016/S0042-207X(97)00035-3"
}

Popovic, N., Dimitrijevic, T., Bogdanov, Ž., Goncić, B., Štrbac, S.,& Rakočević, Z. Lj.. (1997). Nickel film orientation change by nitrogen ion bombardment during deposition. in Vacuum, 48(7-9), 705-708.
https://doi.org/10.1016/S0042-207X(97)00035-3

Popovic N, Dimitrijevic T, Bogdanov Ž, Goncić B, Štrbac S, Rakočević ZL. Nickel film orientation change by nitrogen ion bombardment during deposition. in Vacuum. 1997;48(7-9):705-708.
doi:10.1016/S0042-207X(97)00035-3 .

Popovic, N, Dimitrijevic, T, Bogdanov, Žarko, Goncić, Bratislav, Štrbac, Svetlana, Rakočević, Zlatko Lj., "Nickel film orientation change by nitrogen ion bombardment during deposition" in Vacuum, 48, no. 7-9 (1997):705-708,
https://doi.org/10.1016/S0042-207X(97)00035-3 . .