Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration
Апстракт
Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion j(i) to deposited metal atom j(m) flux ratio j(i)/j(m) at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distan...ce in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. (C) 1998 Elsevier Science S.A.
Кључне речи:
TiN / magnetron ion plating / sputteringИзвор:
Thin Solid Films, 1998, 317, 1-2, 463-467Напомена:
- 5th European Vacuum Conference (EVC 5) / 10th International Conference on Thin Films (ICTF 10), Sep 23-27, 1996, Univ Salamanca, Salamanca, Spain
DOI: 10.1016/S0040-6090(97)00557-9
ISSN: 0040-6090
WoS: 000074517700112
Scopus: 2-s2.0-0032051002
Колекције
Институција/група
VinčaTY - JOUR AU - Zlatanovic, M AU - Popovic, N AU - Bogdanov, Žarko AU - Belosevac, R AU - Kunosic, A AU - Goncić, Bratislav PY - 1998 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6235 AB - Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion j(i) to deposited metal atom j(m) flux ratio j(i)/j(m) at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. (C) 1998 Elsevier Science S.A. T2 - Thin Solid Films T1 - Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration VL - 317 IS - 1-2 SP - 463 EP - 467 DO - 10.1016/S0040-6090(97)00557-9 ER -
@article{ author = "Zlatanovic, M and Popovic, N and Bogdanov, Žarko and Belosevac, R and Kunosic, A and Goncić, Bratislav", year = "1998", abstract = "Three operating modes of a single magnetron were used during deposition processes: balanced magnetron configuration with no external magnetic field and no bias potential applied (magnetron only), balanced magnetron configuration with permanent magnet cages positioned around the deposition volume to form a closed field configuration (BM mode) and an unbalanced magnetron closed field configuration (UBM mode). The influence of the deposition rate and ion j(i) to deposited metal atom j(m) flux ratio j(i)/j(m) at the substrate surface on the texture evolution was discussed. The deposition rate distribution over the target to substrate distance was found to depend on magnetic field configuration and also to be different in metallic and reactive mode. In UBM mode it was possible to obtain nearly constant bias current density along the deposition volume at the constant bias potential. The preferred crystalline orientation was changed from (200) to (111) by increasing target to substrate distance in both BM and UBM modes, while the film deposited in magnetron-only configuration preserved (111) texture. (C) 1998 Elsevier Science S.A.", journal = "Thin Solid Films", title = "Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration", volume = "317", number = "1-2", pages = "463-467", doi = "10.1016/S0040-6090(97)00557-9" }
Zlatanovic, M., Popovic, N., Bogdanov, Ž., Belosevac, R., Kunosic, A.,& Goncić, B.. (1998). Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration. in Thin Solid Films, 317(1-2), 463-467. https://doi.org/10.1016/S0040-6090(97)00557-9
Zlatanovic M, Popovic N, Bogdanov Ž, Belosevac R, Kunosic A, Goncić B. Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration. in Thin Solid Films. 1998;317(1-2):463-467. doi:10.1016/S0040-6090(97)00557-9 .
Zlatanovic, M, Popovic, N, Bogdanov, Žarko, Belosevac, R, Kunosic, A, Goncić, Bratislav, "Microstructural modification of TiN deposited by magnetron ion plating: Influence of magnetic field configuration" in Thin Solid Films, 317, no. 1-2 (1998):463-467, https://doi.org/10.1016/S0040-6090(97)00557-9 . .