Abadias, Gregory

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  • Abadias, Gregory (2)
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Author's Bibliography

Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions

Uglov, Vladimir Vasilevich; Abadias, Gregory; Rovbut, A. Y.; Zlotski, Sergey V.; Saladukhin, Ihar A.; Skuratov, Vladimir A.; Petrović, Srđan M.

(2015)

TY  - JOUR
AU  - Uglov, Vladimir Vasilevich
AU  - Abadias, Gregory
AU  - Rovbut, A. Y.
AU  - Zlotski, Sergey V.
AU  - Saladukhin, Ihar A.
AU  - Skuratov, Vladimir A.
AU  - Petrović, Srđan M.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/612
AB  - The influence of irradiation with He+ ions on the thermal stability of TiZrN and (Ti,Zr)(0.54)Al0.46N nanocrystalline films was studied. The TiZrN and (Ti,Zr)(0.54)Al0.46N films were prepared by reactive magnetron sputtering. XRD research showed that the TiZrN and (Ti,Zr)(0.54)Al0.6N films were single-phase systems (based on cubic c-(Ti,Zr)N and cubic c-(Ti,Zr,AI)N solid solutions) with nanocrystalline (grain size 30 and 21 nm, respectively) structure. The irradiation with He ions and thermal annealing up to 800 degrees C do not affect the structure and phase composition of the (Ti,Zr)(0.54)Al0.46N film. The prior irradiation of the (Ti,Zr)(0.54)Al0.46N film with He+ ions activates spinodal decomposition of the c-(Ti,Zr,Al)N solid solution after thermal annealing at 1000 degrees C due to redistribution of the components of the solid solution inside the grains. (C) 2014 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions
VL  - 354
SP  - 269
EP  - 273
DO  - 10.1016/j.nimb.2014.11.012
ER  - 
@article{
author = "Uglov, Vladimir Vasilevich and Abadias, Gregory and Rovbut, A. Y. and Zlotski, Sergey V. and Saladukhin, Ihar A. and Skuratov, Vladimir A. and Petrović, Srđan M.",
year = "2015",
abstract = "The influence of irradiation with He+ ions on the thermal stability of TiZrN and (Ti,Zr)(0.54)Al0.46N nanocrystalline films was studied. The TiZrN and (Ti,Zr)(0.54)Al0.46N films were prepared by reactive magnetron sputtering. XRD research showed that the TiZrN and (Ti,Zr)(0.54)Al0.6N films were single-phase systems (based on cubic c-(Ti,Zr)N and cubic c-(Ti,Zr,AI)N solid solutions) with nanocrystalline (grain size 30 and 21 nm, respectively) structure. The irradiation with He ions and thermal annealing up to 800 degrees C do not affect the structure and phase composition of the (Ti,Zr)(0.54)Al0.46N film. The prior irradiation of the (Ti,Zr)(0.54)Al0.46N film with He+ ions activates spinodal decomposition of the c-(Ti,Zr,Al)N solid solution after thermal annealing at 1000 degrees C due to redistribution of the components of the solid solution inside the grains. (C) 2014 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions",
volume = "354",
pages = "269-273",
doi = "10.1016/j.nimb.2014.11.012"
}
Uglov, V. V., Abadias, G., Rovbut, A. Y., Zlotski, S. V., Saladukhin, I. A., Skuratov, V. A.,& Petrović, S. M.. (2015). Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354, 269-273.
https://doi.org/10.1016/j.nimb.2014.11.012
Uglov VV, Abadias G, Rovbut AY, Zlotski SV, Saladukhin IA, Skuratov VA, Petrović SM. Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2015;354:269-273.
doi:10.1016/j.nimb.2014.11.012 .
Uglov, Vladimir Vasilevich, Abadias, Gregory, Rovbut, A. Y., Zlotski, Sergey V., Saladukhin, Ihar A., Skuratov, Vladimir A., Petrović, Srđan M., "Thermal stability of nanocrystalline (Ti,Zr)(0.54)Al0.46N films implanted by He+ ions" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354 (2015):269-273,
https://doi.org/10.1016/j.nimb.2014.11.012 . .
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Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation

Uglov, Vladimir Vasilevich; Abadias, Gregory; Zlotski, Sergey V.; Saladukhin, Ihar A.; Skuratov, Vladimir A.; Leshkevich, S. S.; Petrović, Srđan M.

(2015)

TY  - JOUR
AU  - Uglov, Vladimir Vasilevich
AU  - Abadias, Gregory
AU  - Zlotski, Sergey V.
AU  - Saladukhin, Ihar A.
AU  - Skuratov, Vladimir A.
AU  - Leshkevich, S. S.
AU  - Petrović, Srđan M.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/611
AB  - The phase stability, upon vacuum annealing up to 1000 degrees C, of nanostructured (Ti,Zr)(1-x)SixN thin films is investigated by X-ray diffraction analysis as a function of Si content (0.13 LT = x LT = 0.25) and prior irradiation with He ions (40 kV). The quaternary TiZrSiN thin films were deposited by reactive magnetron sputtering from elemental targets at the substrate temperature of 600 degrees C. It was found that the increase in Si content, x, results in the transformation of structure from nanocrystalline (x = 0.13, grain size of 11 nm) to nanocomposite state (0.190 LT x LT = 0.25, grain size of 5 nm). The phase composition of the films changes from single-phase, cubic c-(Ti,Zr)N columns with (1 1 1) preferred orientation to dual-phase system consisting of c-(Ti,Zr)N crystallites and amorphous SiNy. Irradiation with He ions at the doses of 2 x 10(16) and 5 x 1016 cm(-2) does change the phase composition of the films. It is found that the onset temperature for phase decomposition decreases from 1000 degrees C to 800 degrees C with increasing Si content for unirradiated films. The formation of a secondary ZrN phase is observed concomitantly with increased broadening of the (2 0 0) c-(Ti,Zr)N diffraction peak. For irradiated films, the subsequent annealing at 1000 degrees C leads to decomposition of the c-(Ti,Zr)N solid solution into TiN- and ZrN-rich phases as well as crystallization of hexagonal Si3N4 phase.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation
VL  - 354
SP  - 264
EP  - 268
DO  - 10.1016/j.nimb.2014.12.043
ER  - 
@article{
author = "Uglov, Vladimir Vasilevich and Abadias, Gregory and Zlotski, Sergey V. and Saladukhin, Ihar A. and Skuratov, Vladimir A. and Leshkevich, S. S. and Petrović, Srđan M.",
year = "2015",
abstract = "The phase stability, upon vacuum annealing up to 1000 degrees C, of nanostructured (Ti,Zr)(1-x)SixN thin films is investigated by X-ray diffraction analysis as a function of Si content (0.13 LT = x LT = 0.25) and prior irradiation with He ions (40 kV). The quaternary TiZrSiN thin films were deposited by reactive magnetron sputtering from elemental targets at the substrate temperature of 600 degrees C. It was found that the increase in Si content, x, results in the transformation of structure from nanocrystalline (x = 0.13, grain size of 11 nm) to nanocomposite state (0.190 LT x LT = 0.25, grain size of 5 nm). The phase composition of the films changes from single-phase, cubic c-(Ti,Zr)N columns with (1 1 1) preferred orientation to dual-phase system consisting of c-(Ti,Zr)N crystallites and amorphous SiNy. Irradiation with He ions at the doses of 2 x 10(16) and 5 x 1016 cm(-2) does change the phase composition of the films. It is found that the onset temperature for phase decomposition decreases from 1000 degrees C to 800 degrees C with increasing Si content for unirradiated films. The formation of a secondary ZrN phase is observed concomitantly with increased broadening of the (2 0 0) c-(Ti,Zr)N diffraction peak. For irradiated films, the subsequent annealing at 1000 degrees C leads to decomposition of the c-(Ti,Zr)N solid solution into TiN- and ZrN-rich phases as well as crystallization of hexagonal Si3N4 phase.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation",
volume = "354",
pages = "264-268",
doi = "10.1016/j.nimb.2014.12.043"
}
Uglov, V. V., Abadias, G., Zlotski, S. V., Saladukhin, I. A., Skuratov, V. A., Leshkevich, S. S.,& Petrović, S. M.. (2015). Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354, 264-268.
https://doi.org/10.1016/j.nimb.2014.12.043
Uglov VV, Abadias G, Zlotski SV, Saladukhin IA, Skuratov VA, Leshkevich SS, Petrović SM. Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2015;354:264-268.
doi:10.1016/j.nimb.2014.12.043 .
Uglov, Vladimir Vasilevich, Abadias, Gregory, Zlotski, Sergey V., Saladukhin, Ihar A., Skuratov, Vladimir A., Leshkevich, S. S., Petrović, Srđan M., "Thermal stability of nanostructured TiZrSiN thin films subjected to helium ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 354 (2015):264-268,
https://doi.org/10.1016/j.nimb.2014.12.043 . .
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