Perdikakis, Georgios

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orcid::0000-0002-8539-8737
  • Perdikakis, Georgios (2)
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Author's Bibliography

A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV

Kokkoris, Michael; Perdikakis, Georgios; Kossionides, S; Petrović, Srđan M.; Vlastou, R.; Grotzschel, Rainer

(2004)

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Perdikakis, Georgios
AU  - Kossionides, S
AU  - Petrović, Srđan M.
AU  - Vlastou, R.
AU  - Grotzschel, Rainer
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6449
AB  - In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV
VL  - 219
SP  - 226
EP  - 231
DO  - 10.1016/j.nimb.2004.01.058
ER  - 
@article{
author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Vlastou, R. and Grotzschel, Rainer",
year = "2004",
abstract = "In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV",
volume = "219",
pages = "226-231",
doi = "10.1016/j.nimb.2004.01.058"
}
Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M., Vlastou, R.,& Grotzschel, R.. (2004). A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219, 226-231.
https://doi.org/10.1016/j.nimb.2004.01.058
Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Vlastou R, Grotzschel R. A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2004;219:226-231.
doi:10.1016/j.nimb.2004.01.058 .
Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Vlastou, R., Grotzschel, Rainer, "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219 (2004):226-231,
https://doi.org/10.1016/j.nimb.2004.01.058 . .
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On the dechanneling of protons in Si [110]

Kokkoris, Michael; Perdikakis, Georgios; Kossionides, S; Petrović, Srđan M.; Simoen, Eddy Roger

(2003)

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Perdikakis, Georgios
AU  - Kossionides, S
AU  - Petrović, Srđan M.
AU  - Simoen, Eddy Roger
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2668
AB  - In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.
T2  - European Physical Journal B. Condensed Matter and Complex Systems
T1  - On the dechanneling of protons in Si [110]
VL  - 34
IS  - 3
SP  - 257
EP  - 263
DO  - 10.1140/epjb/e2003-00219-y
ER  - 
@article{
author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Simoen, Eddy Roger",
year = "2003",
abstract = "In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E-p = 1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined; yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.",
journal = "European Physical Journal B. Condensed Matter and Complex Systems",
title = "On the dechanneling of protons in Si [110]",
volume = "34",
number = "3",
pages = "257-263",
doi = "10.1140/epjb/e2003-00219-y"
}
Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M.,& Simoen, E. R.. (2003). On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems, 34(3), 257-263.
https://doi.org/10.1140/epjb/e2003-00219-y
Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Simoen ER. On the dechanneling of protons in Si [110]. in European Physical Journal B. Condensed Matter and Complex Systems. 2003;34(3):257-263.
doi:10.1140/epjb/e2003-00219-y .
Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Simoen, Eddy Roger, "On the dechanneling of protons in Si [110]" in European Physical Journal B. Condensed Matter and Complex Systems, 34, no. 3 (2003):257-263,
https://doi.org/10.1140/epjb/e2003-00219-y . .
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