TY  - JOUR
AU  - Atić, Aleksandar
AU  - Wang, Xizhe
AU  - Vuković, Nikola
AU  - Stanojević, Novak
AU  - Demić, Aleksandar
AU  - Indjin, Dragan
AU  - Radovanović, Jelena
PY  - 2024
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12868
AB  - ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.
T2  - Materials
T1  - Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation
VL  - 17
IS  - 4
SP  - 927
DO  - 10.3390/ma17040927
ER  - 

@article{
author = "Atić, Aleksandar and Wang, Xizhe and Vuković, Nikola and Stanojević, Novak and Demić, Aleksandar and Indjin, Dragan and Radovanović, Jelena",
year = "2024",
abstract = "ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.",
journal = "Materials",
title = "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation",
volume = "17",
number = "4",
pages = "927",
doi = "10.3390/ma17040927"
}

Atić, A., Wang, X., Vuković, N., Stanojević, N., Demić, A., Indjin, D.,& Radovanović, J.. (2024). Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials, 17(4), 927.
https://doi.org/10.3390/ma17040927

Atić A, Wang X, Vuković N, Stanojević N, Demić A, Indjin D, Radovanović J. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. in Materials. 2024;17(4):927.
doi:10.3390/ma17040927 .

Atić, Aleksandar, Wang, Xizhe, Vuković, Nikola, Stanojević, Novak, Demić, Aleksandar, Indjin, Dragan, Radovanović, Jelena, "Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation" in Materials, 17, no. 4 (2024):927,
https://doi.org/10.3390/ma17040927 . .

TY  - CONF
AU  - Vuković, Nikola
AU  - Atić, Aleksandar
AU  - Stanojević, Novak
AU  - Wang, X.
AU  - Demić, Aleksandar
AU  - Inđin, Dragan
AU  - Radovanović, Jelena
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10867
AB  - In this contribution, we present our recent work on modeling intersubband transitions in the conduction band of semiconductor-based quantum well structures [1], [2]. Particularly interesting are possibilities offered by ZnO/ZnMgO and La-doped BaSnO3/BaO perovskite-oxide for the realization of room temperature oxide-based THz quantum well optoelectronic devices due to their advantageous physical and chemical properties [3], [4]. The electronic structure is calculated self-consistently by solving the Schrödinger–Poisson system of equations. A significant change of the transition energy due to the depolarization shift is also considered in cases when high doping is present. The charge-induced coherence due to the strong dipole-dipole Coulomb interaction between intersubband transitions leads to the formation of multisubband plasmons and a complete quantum model [5] based on the dipole representation must be used to calculate absorption spectra.
PB  - Belgrade : Institute of Physics
C3  - 16th Photonics Workshop : Book of abstracts
T1  - Modeling of optical properties of novel terahertz photonics quantum well heterostructures
SP  - 38
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10867
ER  - 

@conference{
author = "Vuković, Nikola and Atić, Aleksandar and Stanojević, Novak and Wang, X. and Demić, Aleksandar and Inđin, Dragan and Radovanović, Jelena",
year = "2023",
abstract = "In this contribution, we present our recent work on modeling intersubband transitions in the conduction band of semiconductor-based quantum well structures [1], [2]. Particularly interesting are possibilities offered by ZnO/ZnMgO and La-doped BaSnO3/BaO perovskite-oxide for the realization of room temperature oxide-based THz quantum well optoelectronic devices due to their advantageous physical and chemical properties [3], [4]. The electronic structure is calculated self-consistently by solving the Schrödinger–Poisson system of equations. A significant change of the transition energy due to the depolarization shift is also considered in cases when high doping is present. The charge-induced coherence due to the strong dipole-dipole Coulomb interaction between intersubband transitions leads to the formation of multisubband plasmons and a complete quantum model [5] based on the dipole representation must be used to calculate absorption spectra.",
publisher = "Belgrade : Institute of Physics",
journal = "16th Photonics Workshop : Book of abstracts",
title = "Modeling of optical properties of novel terahertz photonics quantum well heterostructures",
pages = "38",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10867"
}

Vuković, N., Atić, A., Stanojević, N., Wang, X., Demić, A., Inđin, D.,& Radovanović, J.. (2023). Modeling of optical properties of novel terahertz photonics quantum well heterostructures. in 16th Photonics Workshop : Book of abstracts
Belgrade : Institute of Physics., 38.
https://hdl.handle.net/21.15107/rcub_vinar_10867

Vuković N, Atić A, Stanojević N, Wang X, Demić A, Inđin D, Radovanović J. Modeling of optical properties of novel terahertz photonics quantum well heterostructures. in 16th Photonics Workshop : Book of abstracts. 2023;:38.
https://hdl.handle.net/21.15107/rcub_vinar_10867 .

Vuković, Nikola, Atić, Aleksandar, Stanojević, Novak, Wang, X., Demić, Aleksandar, Inđin, Dragan, Radovanović, Jelena, "Modeling of optical properties of novel terahertz photonics quantum well heterostructures" in 16th Photonics Workshop : Book of abstracts (2023):38,
https://hdl.handle.net/21.15107/rcub_vinar_10867 .

TY  - CONF
AU  - Atić, Aleksandar
AU  - Vuković, Nikola
AU  - Radovanović, Jelena
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11812
AB  - There has been a surge of interest in recent years for the advancement of wide bandgap oxides such as zinc oxide (ZnO), magnesium oxide (MgO), gallium oxide (Ga2O3), etc. [1,2]. These materials have gained significant attention due to their distinctive characteristics and properties which are promising for the development of high-performance optoelectronic devices for applications in the domains of sensing, communications, and imaging. More specifically, Ga2O3 has wide bandgap energy of approximately 4.8 to 4.9 electron volts (eV), thus exhibiting exceptional transparency to ultraviolet (UV) radiation while displaying opaqueness to visible light [3]. On a parallel note, ZnO shows exemplary optical and electrical properties, including a high exciton binding energy and substantial oscillator strength [4]. Of particular significance is the exploration of intersubband transitions within multiple quantum well (MQW) structures, which offers a promising path for efficient light absorption and emission in the mid-infrared to terahertz spectral range. In this contribution we will numerically simulate the absorption spectra of the wide bandgap oxide MQW structures, adapting the approach for treating the light-matter interaction suitable when the depolarization field is the dominant many-body contribution, and discuss the potential applications in optoelectronic devices, specifically mid-infrared detectors, quantum cascade lasers, and modulators.
PB  - Belgrade : Vinča Institute of Nuclear Sciences
C3  - PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade
T1  - Investigation of intersubband transitions in wide bandgap oxide quantum well structures for optoelectronic device applications
SP  - 100
EP  - 100
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11812
ER  - 

@conference{
author = "Atić, Aleksandar and Vuković, Nikola and Radovanović, Jelena",
year = "2023",
abstract = "There has been a surge of interest in recent years for the advancement of wide bandgap oxides such as zinc oxide (ZnO), magnesium oxide (MgO), gallium oxide (Ga2O3), etc. [1,2]. These materials have gained significant attention due to their distinctive characteristics and properties which are promising for the development of high-performance optoelectronic devices for applications in the domains of sensing, communications, and imaging. More specifically, Ga2O3 has wide bandgap energy of approximately 4.8 to 4.9 electron volts (eV), thus exhibiting exceptional transparency to ultraviolet (UV) radiation while displaying opaqueness to visible light [3]. On a parallel note, ZnO shows exemplary optical and electrical properties, including a high exciton binding energy and substantial oscillator strength [4]. Of particular significance is the exploration of intersubband transitions within multiple quantum well (MQW) structures, which offers a promising path for efficient light absorption and emission in the mid-infrared to terahertz spectral range. In this contribution we will numerically simulate the absorption spectra of the wide bandgap oxide MQW structures, adapting the approach for treating the light-matter interaction suitable when the depolarization field is the dominant many-body contribution, and discuss the potential applications in optoelectronic devices, specifically mid-infrared detectors, quantum cascade lasers, and modulators.",
publisher = "Belgrade : Vinča Institute of Nuclear Sciences",
journal = "PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade",
title = "Investigation of intersubband transitions in wide bandgap oxide quantum well structures for optoelectronic device applications",
pages = "100-100",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11812"
}

Atić, A., Vuković, N.,& Radovanović, J.. (2023). Investigation of intersubband transitions in wide bandgap oxide quantum well structures for optoelectronic device applications. in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade
Belgrade : Vinča Institute of Nuclear Sciences., 100-100.
https://hdl.handle.net/21.15107/rcub_vinar_11812

Atić A, Vuković N, Radovanović J. Investigation of intersubband transitions in wide bandgap oxide quantum well structures for optoelectronic device applications. in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade. 2023;:100-100.
https://hdl.handle.net/21.15107/rcub_vinar_11812 .

Atić, Aleksandar, Vuković, Nikola, Radovanović, Jelena, "Investigation of intersubband transitions in wide bandgap oxide quantum well structures for optoelectronic device applications" in PHOTONICA2023 : 9th International School and Conference on Photonics : book of abstracts; August 28 - September 1, 2023; Belgrade (2023):100-100,
https://hdl.handle.net/21.15107/rcub_vinar_11812 .

TY  - JOUR
AU  - Atić, Aleksandar
AU  - Vuković, Nikola N.
AU  - Radovanović, Jelena
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10450
AB  - ZnO based heterostructures have recently received increased research attention, related to the development of room temperature THz/MiR semiconductor devices. The potential for these applications stems from the combination of wide direct bandgap and high exciton binding energy. In this work, we focus on the intersubband transition between bound states in the conduction band, and apply self-consistent numerical modelling to a system of Schrödinger–Poisson equations to evaluate the electronics structure of coupled semiconductor quantum wells. We subsequently analyse the fractional optical absorption at room temperature, as it varies with layers’ thicknesses, doping density and external electric field magnitude.
T2  - Optical and Quantum Electronics
T1  - Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells
VL  - 54
IS  - 12
SP  - 810
DO  - 10.1007/s11082-022-04170-0
ER  - 

@article{
author = "Atić, Aleksandar and Vuković, Nikola N. and Radovanović, Jelena",
year = "2022",
abstract = "ZnO based heterostructures have recently received increased research attention, related to the development of room temperature THz/MiR semiconductor devices. The potential for these applications stems from the combination of wide direct bandgap and high exciton binding energy. In this work, we focus on the intersubband transition between bound states in the conduction band, and apply self-consistent numerical modelling to a system of Schrödinger–Poisson equations to evaluate the electronics structure of coupled semiconductor quantum wells. We subsequently analyse the fractional optical absorption at room temperature, as it varies with layers’ thicknesses, doping density and external electric field magnitude.",
journal = "Optical and Quantum Electronics",
title = "Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells",
volume = "54",
number = "12",
pages = "810",
doi = "10.1007/s11082-022-04170-0"
}

Atić, A., Vuković, N. N.,& Radovanović, J.. (2022). Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells. in Optical and Quantum Electronics, 54(12), 810.
https://doi.org/10.1007/s11082-022-04170-0

Atić A, Vuković NN, Radovanović J. Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells. in Optical and Quantum Electronics. 2022;54(12):810.
doi:10.1007/s11082-022-04170-0 .

Atić, Aleksandar, Vuković, Nikola N., Radovanović, Jelena, "Calculation of intersubband absorption in ZnO/ZnMgO asymmetric double quantum wells" in Optical and Quantum Electronics, 54, no. 12 (2022):810,
https://doi.org/10.1007/s11082-022-04170-0 . .

TY  - CONF
AU  - Atić, Aleksandar
AU  - Radovanović, Jelena
AU  - Vuković, Nikola
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10866
AB  - Semiconductor devices operating in the terahertz (THz) and near/mid infrared (IR) parts of the optical spectrum have been continuously explored and improved during the previous two decades [1-3]. Multiple new material platforms are being experimentally and theoretically investigated as candidates for room temperature operation of THz devices. One of the materials under recent consideration is ZnO due to its wide direct bandgap and high exciton binding energy. In this contribution we illustrate the use of a modified version of the Newton-Raphson method to numerically and self-consistently solve a system of SchrödingerPoisson equations for a structure consisting of coupled ZnObased quantum wells. The results obtained are compared with the experimental data available in the literature, after which the Additionally, the impact of the external electric field applied to the structure is assessed in order to determine the doping profile and well/barrier thicknesses that would be most promising for quantum cascade laser applications. Finally, we evaluate the absorption due to intersubband transitions between the bound states.
PB  - Belgrade : Institute of Physics
C3  - 15th Photonics Workshop (Conference) : book of abstracts; March 13-16, 2022; Kopaonik
T1  - Numerical modeling of new oxide-based heterostructures  for use in QCL devices
SP  - 16
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10866
ER  - 

@conference{
author = "Atić, Aleksandar and Radovanović, Jelena and Vuković, Nikola",
year = "2022",
abstract = "Semiconductor devices operating in the terahertz (THz) and near/mid infrared (IR) parts of the optical spectrum have been continuously explored and improved during the previous two decades [1-3]. Multiple new material platforms are being experimentally and theoretically investigated as candidates for room temperature operation of THz devices. One of the materials under recent consideration is ZnO due to its wide direct bandgap and high exciton binding energy. In this contribution we illustrate the use of a modified version of the Newton-Raphson method to numerically and self-consistently solve a system of SchrödingerPoisson equations for a structure consisting of coupled ZnObased quantum wells. The results obtained are compared with the experimental data available in the literature, after which the Additionally, the impact of the external electric field applied to the structure is assessed in order to determine the doping profile and well/barrier thicknesses that would be most promising for quantum cascade laser applications. Finally, we evaluate the absorption due to intersubband transitions between the bound states.",
publisher = "Belgrade : Institute of Physics",
journal = "15th Photonics Workshop (Conference) : book of abstracts; March 13-16, 2022; Kopaonik",
title = "Numerical modeling of new oxide-based heterostructures  for use in QCL devices",
pages = "16",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10866"
}

Atić, A., Radovanović, J.,& Vuković, N.. (2022). Numerical modeling of new oxide-based heterostructures  for use in QCL devices. in 15th Photonics Workshop (Conference) : book of abstracts; March 13-16, 2022; Kopaonik
Belgrade : Institute of Physics., 16.
https://hdl.handle.net/21.15107/rcub_vinar_10866

Atić A, Radovanović J, Vuković N. Numerical modeling of new oxide-based heterostructures  for use in QCL devices. in 15th Photonics Workshop (Conference) : book of abstracts; March 13-16, 2022; Kopaonik. 2022;:16.
https://hdl.handle.net/21.15107/rcub_vinar_10866 .

Atić, Aleksandar, Radovanović, Jelena, Vuković, Nikola, "Numerical modeling of new oxide-based heterostructures  for use in QCL devices" in 15th Photonics Workshop (Conference) : book of abstracts; March 13-16, 2022; Kopaonik (2022):16,
https://hdl.handle.net/21.15107/rcub_vinar_10866 .

TY  - CONF
AU  - Atić, Aleksandar
AU  - Radovanović, Jelena
AU  - Vuković, Nikola
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10865
AB  - In recent years ZnO has become a popular semiconductor withmany potential applications in infra-red and THz optical devices owing to awide direct bandgap (3.4 eV) in combination with relatively high exciton binding energy (60 meV) [1]-[2]. In this work, we model the electronic structure of coupled oxide-semiconductor quantum wells by numerically solving the system of coupled Schrödinger-Poisson equations self-consistently (Fig. 1).We compare the obtained results with the recent experimental data[3] and analyze howthe variation of the layers’thicknesses affects the energy states. In addition, we examine the influence of doping to assess the differences between single well and two wells’cases, for the purpose ofdesigning more complex multi-well optical system in the future.
PB  - Belgrade : Institute of Physics
C3  - PHOTONICA2021 : 8th International School and Conference on Photonics and HEMMAGINERO workshop : Abstracts of Tutorial, Keynote, Invited Lectures, Progress Reports and Contributed Papers; August 23-27, 2021; Belgrade
T1  - Modeling of intersubband transitions in ZnO/ZnMgO Coupled Quantum Wells
SP  - 118
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10865
ER  - 

@conference{
author = "Atić, Aleksandar and Radovanović, Jelena and Vuković, Nikola",
year = "2021",
abstract = "In recent years ZnO has become a popular semiconductor withmany potential applications in infra-red and THz optical devices owing to awide direct bandgap (3.4 eV) in combination with relatively high exciton binding energy (60 meV) [1]-[2]. In this work, we model the electronic structure of coupled oxide-semiconductor quantum wells by numerically solving the system of coupled Schrödinger-Poisson equations self-consistently (Fig. 1).We compare the obtained results with the recent experimental data[3] and analyze howthe variation of the layers’thicknesses affects the energy states. In addition, we examine the influence of doping to assess the differences between single well and two wells’cases, for the purpose ofdesigning more complex multi-well optical system in the future.",
publisher = "Belgrade : Institute of Physics",
journal = "PHOTONICA2021 : 8th International School and Conference on Photonics and HEMMAGINERO workshop : Abstracts of Tutorial, Keynote, Invited Lectures, Progress Reports and Contributed Papers; August 23-27, 2021; Belgrade",
title = "Modeling of intersubband transitions in ZnO/ZnMgO Coupled Quantum Wells",
pages = "118",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10865"
}

Atić, A., Radovanović, J.,& Vuković, N.. (2021). Modeling of intersubband transitions in ZnO/ZnMgO Coupled Quantum Wells. in PHOTONICA2021 : 8th International School and Conference on Photonics and HEMMAGINERO workshop : Abstracts of Tutorial, Keynote, Invited Lectures, Progress Reports and Contributed Papers; August 23-27, 2021; Belgrade
Belgrade : Institute of Physics., 118.
https://hdl.handle.net/21.15107/rcub_vinar_10865

Atić A, Radovanović J, Vuković N. Modeling of intersubband transitions in ZnO/ZnMgO Coupled Quantum Wells. in PHOTONICA2021 : 8th International School and Conference on Photonics and HEMMAGINERO workshop : Abstracts of Tutorial, Keynote, Invited Lectures, Progress Reports and Contributed Papers; August 23-27, 2021; Belgrade. 2021;:118.
https://hdl.handle.net/21.15107/rcub_vinar_10865 .

Atić, Aleksandar, Radovanović, Jelena, Vuković, Nikola, "Modeling of intersubband transitions in ZnO/ZnMgO Coupled Quantum Wells" in PHOTONICA2021 : 8th International School and Conference on Photonics and HEMMAGINERO workshop : Abstracts of Tutorial, Keynote, Invited Lectures, Progress Reports and Contributed Papers; August 23-27, 2021; Belgrade (2021):118,
https://hdl.handle.net/21.15107/rcub_vinar_10865 .

TY  - CONF
AU  - Atić, Aleksandar
AU  - Radovanović, Jelena
AU  - Milanović, Vitomir
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10864
AB  - ZnO has been proposed recently as a good base material for high-power terahertz quantum cascade lasers (QCLs) operating at room temperature. We have developed a theoretical model for calculation of the optical gain, based on solving the system of rate equations and taking into account relevant scattering mechanisms. This model has been implemented to perform numerical simulations using ZnO/ZnMgO material combination, starting from the conventional design with three well within the active region of the structure. The influence of the layer widths and composition on the output properties has been considered, together with the variation of the number of quantum wells per QCL period.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - Eighteenth Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts; December 4-6, 2019; Belgrade
T1  - Modeling of the optical gain in ZnO-based quantum cascade lasers
SP  - 31
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10864
ER  - 

@conference{
author = "Atić, Aleksandar and Radovanović, Jelena and Milanović, Vitomir",
year = "2019",
abstract = "ZnO has been proposed recently as a good base material for high-power terahertz quantum cascade lasers (QCLs) operating at room temperature. We have developed a theoretical model for calculation of the optical gain, based on solving the system of rate equations and taking into account relevant scattering mechanisms. This model has been implemented to perform numerical simulations using ZnO/ZnMgO material combination, starting from the conventional design with three well within the active region of the structure. The influence of the layer widths and composition on the output properties has been considered, together with the variation of the number of quantum wells per QCL period.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "Eighteenth Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts; December 4-6, 2019; Belgrade",
title = "Modeling of the optical gain in ZnO-based quantum cascade lasers",
pages = "31",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10864"
}

Atić, A., Radovanović, J.,& Milanović, V.. (2019). Modeling of the optical gain in ZnO-based quantum cascade lasers. in Eighteenth Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts; December 4-6, 2019; Belgrade
Belgrade : Institute of Technical Sciences of SASA., 31.
https://hdl.handle.net/21.15107/rcub_vinar_10864

Atić A, Radovanović J, Milanović V. Modeling of the optical gain in ZnO-based quantum cascade lasers. in Eighteenth Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts; December 4-6, 2019; Belgrade. 2019;:31.
https://hdl.handle.net/21.15107/rcub_vinar_10864 .

Atić, Aleksandar, Radovanović, Jelena, Milanović, Vitomir, "Modeling of the optical gain in ZnO-based quantum cascade lasers" in Eighteenth Young Researchers' Conference Materials Sciences and Engineering : program and the book of abstracts; December 4-6, 2019; Belgrade (2019):31,
https://hdl.handle.net/21.15107/rcub_vinar_10864 .