TY  - JOUR
AU  - Lazovic, S.
AU  - Maletić, Dimitrije
AU  - Leskovac, Andreja
AU  - Filipović, Jelena G.
AU  - Puac, N.
AU  - Malović, Gordana N.
AU  - Joksić, Gordana
AU  - Petrović, Z. Lj.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/154
AB  - We use human primary fibroblasts for comparing plasma and gamma rays induced DNA damage. In both cases, DNA strand breaks occur, but of fundamentally different nature. Unlike gamma exposure, contact with plasma predominantly leads to single strand breaks and base-damages, while double strand breaks are mainly consequence of the cell repair mechanisms. Different cell signaling mechanisms are detected confirming this (ataxia telangiectasia mutated - ATM and ataxia telangiectasia and Rad3 related - ATR, respectively). The effective plasma doses can be tuned to match the typical therapeutic doses of 2Gy. Tailoring the effective dose through plasma power and duration of the treatment enables safety precautions mainly by inducing apoptosis and consequently reduced frequency of micronuclei. (C) 2014 AIP Publishing LLC.
T2  - Applied Physics Letters
T1  - Plasma induced DNA damage: Comparison with the effects of ionizing radiation
VL  - 105
IS  - 12
DO  - 10.1063/1.4896626
ER  - 

@article{
author = "Lazovic, S. and Maletić, Dimitrije and Leskovac, Andreja and Filipović, Jelena G. and Puac, N. and Malović, Gordana N. and Joksić, Gordana and Petrović, Z. Lj.",
year = "2014",
abstract = "We use human primary fibroblasts for comparing plasma and gamma rays induced DNA damage. In both cases, DNA strand breaks occur, but of fundamentally different nature. Unlike gamma exposure, contact with plasma predominantly leads to single strand breaks and base-damages, while double strand breaks are mainly consequence of the cell repair mechanisms. Different cell signaling mechanisms are detected confirming this (ataxia telangiectasia mutated - ATM and ataxia telangiectasia and Rad3 related - ATR, respectively). The effective plasma doses can be tuned to match the typical therapeutic doses of 2Gy. Tailoring the effective dose through plasma power and duration of the treatment enables safety precautions mainly by inducing apoptosis and consequently reduced frequency of micronuclei. (C) 2014 AIP Publishing LLC.",
journal = "Applied Physics Letters",
title = "Plasma induced DNA damage: Comparison with the effects of ionizing radiation",
volume = "105",
number = "12",
doi = "10.1063/1.4896626"
}

Lazovic, S., Maletić, D., Leskovac, A., Filipović, J. G., Puac, N., Malović, G. N., Joksić, G.,& Petrović, Z. Lj.. (2014). Plasma induced DNA damage: Comparison with the effects of ionizing radiation. in Applied Physics Letters, 105(12).
https://doi.org/10.1063/1.4896626

Lazovic S, Maletić D, Leskovac A, Filipović JG, Puac N, Malović GN, Joksić G, Petrović ZL. Plasma induced DNA damage: Comparison with the effects of ionizing radiation. in Applied Physics Letters. 2014;105(12).
doi:10.1063/1.4896626 .

Lazovic, S., Maletić, Dimitrije, Leskovac, Andreja, Filipović, Jelena G., Puac, N., Malović, Gordana N., Joksić, Gordana, Petrović, Z. Lj., "Plasma induced DNA damage: Comparison with the effects of ionizing radiation" in Applied Physics Letters, 105, no. 12 (2014),
https://doi.org/10.1063/1.4896626 . .

TY  - CONF
AU  - Radmilović-Rađenović, Marija
AU  - Petrovic, Z. Lj.
AU  - Nikitovic, Z.
AU  - Strinic, A.
AU  - Stojanovic, V.
AU  - Nina, A.
AU  - Rađenović, Branislav M.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6583
AB  - Neutral beam processing has evolved into one of the most promising methods for overcoming plasma process induced damage. Surface treatment by neutrals avoids problems with surface charging effects, frequently encountered when using common ion treatment, especially for low k-materials. In this paper, the influence of various parameters on the neutralization of ion beams in Ar-CF4 mixture based on a Particle in Cell with Monte Carlo collisions (PIC/MCC) simulation is studied. The efficiency of neutralization has been treated by considering both surface neutralization of ions and collisions of ions in the gas.
C3  - Materials Science Forum
T1  - Particle-in-cell modelling of a neutral beam source for material processing in nanoscale structures fabrication
VL  - 555
SP  - 47
EP  - +
DO  - 10.4028/www.scientific.net/MSF.555.47
ER  - 

@conference{
author = "Radmilović-Rađenović, Marija and Petrovic, Z. Lj. and Nikitovic, Z. and Strinic, A. and Stojanovic, V. and Nina, A. and Rađenović, Branislav M.",
year = "2007",
abstract = "Neutral beam processing has evolved into one of the most promising methods for overcoming plasma process induced damage. Surface treatment by neutrals avoids problems with surface charging effects, frequently encountered when using common ion treatment, especially for low k-materials. In this paper, the influence of various parameters on the neutralization of ion beams in Ar-CF4 mixture based on a Particle in Cell with Monte Carlo collisions (PIC/MCC) simulation is studied. The efficiency of neutralization has been treated by considering both surface neutralization of ions and collisions of ions in the gas.",
journal = "Materials Science Forum",
title = "Particle-in-cell modelling of a neutral beam source for material processing in nanoscale structures fabrication",
volume = "555",
pages = "47-+",
doi = "10.4028/www.scientific.net/MSF.555.47"
}

Radmilović-Rađenović, M., Petrovic, Z. Lj., Nikitovic, Z., Strinic, A., Stojanovic, V., Nina, A.,& Rađenović, B. M.. (2007). Particle-in-cell modelling of a neutral beam source for material processing in nanoscale structures fabrication. in Materials Science Forum, 555, 47-+.
https://doi.org/10.4028/www.scientific.net/MSF.555.47

Radmilović-Rađenović M, Petrovic ZL, Nikitovic Z, Strinic A, Stojanovic V, Nina A, Rađenović BM. Particle-in-cell modelling of a neutral beam source for material processing in nanoscale structures fabrication. in Materials Science Forum. 2007;555:47-+.
doi:10.4028/www.scientific.net/MSF.555.47 .

Radmilović-Rađenović, Marija, Petrovic, Z. Lj., Nikitovic, Z., Strinic, A., Stojanovic, V., Nina, A., Rađenović, Branislav M., "Particle-in-cell modelling of a neutral beam source for material processing in nanoscale structures fabrication" in Materials Science Forum, 555 (2007):47-+,
https://doi.org/10.4028/www.scientific.net/MSF.555.47 . .

TY  - CONF
AU  - Rađenović, Branislav M.
AU  - Radmilovc-Radjenovic, M.
AU  - Petrovic, Z. Lj.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6584
AB  - A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 non-equilibrium plasma etching Of SiO2.
C3  - Materials Science Forum
T1  - Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas
VL  - 555
SP  - 53
EP  - +
DO  - 10.4028/www.scientific.net/MSF.555.53
ER  - 

@conference{
author = "Rađenović, Branislav M. and Radmilovc-Radjenovic, M. and Petrovic, Z. Lj.",
year = "2007",
abstract = "A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 non-equilibrium plasma etching Of SiO2.",
journal = "Materials Science Forum",
title = "Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas",
volume = "555",
pages = "53-+",
doi = "10.4028/www.scientific.net/MSF.555.53"
}

Rađenović, B. M., Radmilovc-Radjenovic, M.,& Petrovic, Z. Lj.. (2007). Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas. in Materials Science Forum, 555, 53-+.
https://doi.org/10.4028/www.scientific.net/MSF.555.53

Rađenović BM, Radmilovc-Radjenovic M, Petrovic ZL. Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas. in Materials Science Forum. 2007;555:53-+.
doi:10.4028/www.scientific.net/MSF.555.53 .

Rađenović, Branislav M., Radmilovc-Radjenovic, M., Petrovic, Z. Lj., "Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas" in Materials Science Forum, 555 (2007):53-+,
https://doi.org/10.4028/www.scientific.net/MSF.555.53 . .