TY  - JOUR
AU  - Stojadinović, N.
AU  - Đorić-Veljković, S.
AU  - Davidović, V.
AU  - Golubović, S.
AU  - Stanković, Srboljub
AU  - Prijić, A.
AU  - Prijić, Z.
AU  - Manić, I.
AU  - Danković, D.
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12129
AB  - In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.
T2  - Microelectronics Reliability
T1  - NBTI and irradiation related degradation mechanisms in power VDMOS transistors
VL  - 88-90
SP  - 135
EP  - 141
DO  - 10.1016/j.microrel.2018.07.138
ER  - 

@article{
author = "Stojadinović, N. and Đorić-Veljković, S. and Davidović, V. and Golubović, S. and Stanković, Srboljub and Prijić, A. and Prijić, Z. and Manić, I. and Danković, D.",
year = "2018",
abstract = "In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.",
journal = "Microelectronics Reliability",
title = "NBTI and irradiation related degradation mechanisms in power VDMOS transistors",
volume = "88-90",
pages = "135-141",
doi = "10.1016/j.microrel.2018.07.138"
}

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I.,& Danković, D.. (2018). NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability, 88-90, 135-141.
https://doi.org/10.1016/j.microrel.2018.07.138

Stojadinović N, Đorić-Veljković S, Davidović V, Golubović S, Stanković S, Prijić A, Prijić Z, Manić I, Danković D. NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability. 2018;88-90:135-141.
doi:10.1016/j.microrel.2018.07.138 .

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, Srboljub, Prijić, A., Prijić, Z., Manić, I., Danković, D., "NBTI and irradiation related degradation mechanisms in power VDMOS transistors" in Microelectronics Reliability, 88-90 (2018):135-141,
https://doi.org/10.1016/j.microrel.2018.07.138 . .