NBTI and irradiation related degradation mechanisms in power VDMOS transistors
Само за регистроване кориснике
2018
Аутори
Stojadinović, N.Đorić-Veljković, S.
Davidović, V.
Golubović, S.
Stanković, Srboljub
Prijić, A.
Prijić, Z.
Manić, I.
Danković, D.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.
Кључне речи:
NBT stress / Irradiation / Power VDMOS / Oxide trapped charge / Interface trapsИзвор:
Microelectronics Reliability, 2018, 88-90, 135-141Финансирање / пројекти:
- Serbian Academy of Sciences and Arts [F-148]
- Карактеризација, анализа и моделовање физичких појава у танким слојевима за примену у MOS нанокомпонентама (RS-MESTD-Basic Research (BR or ON)-171026)
DOI: 10.1016/j.microrel.2018.07.138
ISSN: 0026-2714
WoS: 000448227000026
Scopus: 2-s2.0-85054785454
Колекције
Институција/група
VinčaTY - JOUR AU - Stojadinović, N. AU - Đorić-Veljković, S. AU - Davidović, V. AU - Golubović, S. AU - Stanković, Srboljub AU - Prijić, A. AU - Prijić, Z. AU - Manić, I. AU - Danković, D. PY - 2018 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12129 AB - In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy. T2 - Microelectronics Reliability T1 - NBTI and irradiation related degradation mechanisms in power VDMOS transistors VL - 88-90 SP - 135 EP - 141 DO - 10.1016/j.microrel.2018.07.138 ER -
@article{ author = "Stojadinović, N. and Đorić-Veljković, S. and Davidović, V. and Golubović, S. and Stanković, Srboljub and Prijić, A. and Prijić, Z. and Manić, I. and Danković, D.", year = "2018", abstract = "In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.", journal = "Microelectronics Reliability", title = "NBTI and irradiation related degradation mechanisms in power VDMOS transistors", volume = "88-90", pages = "135-141", doi = "10.1016/j.microrel.2018.07.138" }
Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I.,& Danković, D.. (2018). NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability, 88-90, 135-141. https://doi.org/10.1016/j.microrel.2018.07.138
Stojadinović N, Đorić-Veljković S, Davidović V, Golubović S, Stanković S, Prijić A, Prijić Z, Manić I, Danković D. NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability. 2018;88-90:135-141. doi:10.1016/j.microrel.2018.07.138 .
Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, Srboljub, Prijić, A., Prijić, Z., Manić, I., Danković, D., "NBTI and irradiation related degradation mechanisms in power VDMOS transistors" in Microelectronics Reliability, 88-90 (2018):135-141, https://doi.org/10.1016/j.microrel.2018.07.138 . .