TY  - CONF
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Stanković, Srboljub
AU  - Duan, Russell
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12137
AB  - Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters or pMOS dosimeters, have found applications in space, high-energy physics laboratories, and radiotherapy clinics. The RADFET is a discrete p-channel MOSFET with a thick gate oxide (typically from 100 nm to over 1 µm), optimised for radiation sensitivity. Radiation induces charges in the gate oxide, which cause the shift of the threshold voltage proportional to the radiation dose. The main good features of the RADFET are small size, simple/immediate/non-destructive read-out, electronic signal, and small cost when produced in volume. The main shortcoming is limited sensitivity, which precludes the use of standard RADFET designs in applications requiring minimum detectable dose lower than approx. 1 cGy. Tyndall National Institute has been developing RADFETs for almost three decades. The technology has recently been transferred to a start-up company Varadis. We present results of electrical and radiation characterisation steps done on Varadis commercial RADFET products. We discuss critical issues in relation to the optimum use of RADFETs and possible methods for lowering the minimum detectable dose.
PB  - Niš : Sievert Association
C3  - RAP 2019 : International conference on radiation applications : Book of abstracts
T1  - Comprehensive characterisation of Tyndall National Institute RADFETs for commercial applications in various fields
SP  - 40
EP  - 40
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12137
ER  - 

@conference{
author = "Jakšić, Aleksandar and Vasović, Nikola and Stanković, Srboljub and Duan, Russell",
year = "2019",
abstract = "Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters or pMOS dosimeters, have found applications in space, high-energy physics laboratories, and radiotherapy clinics. The RADFET is a discrete p-channel MOSFET with a thick gate oxide (typically from 100 nm to over 1 µm), optimised for radiation sensitivity. Radiation induces charges in the gate oxide, which cause the shift of the threshold voltage proportional to the radiation dose. The main good features of the RADFET are small size, simple/immediate/non-destructive read-out, electronic signal, and small cost when produced in volume. The main shortcoming is limited sensitivity, which precludes the use of standard RADFET designs in applications requiring minimum detectable dose lower than approx. 1 cGy. Tyndall National Institute has been developing RADFETs for almost three decades. The technology has recently been transferred to a start-up company Varadis. We present results of electrical and radiation characterisation steps done on Varadis commercial RADFET products. We discuss critical issues in relation to the optimum use of RADFETs and possible methods for lowering the minimum detectable dose.",
publisher = "Niš : Sievert Association",
journal = "RAP 2019 : International conference on radiation applications : Book of abstracts",
title = "Comprehensive characterisation of Tyndall National Institute RADFETs for commercial applications in various fields",
pages = "40-40",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12137"
}

Jakšić, A., Vasović, N., Stanković, S.,& Duan, R.. (2019). Comprehensive characterisation of Tyndall National Institute RADFETs for commercial applications in various fields. in RAP 2019 : International conference on radiation applications : Book of abstracts
Niš : Sievert Association., 40-40.
https://hdl.handle.net/21.15107/rcub_vinar_12137

Jakšić A, Vasović N, Stanković S, Duan R. Comprehensive characterisation of Tyndall National Institute RADFETs for commercial applications in various fields. in RAP 2019 : International conference on radiation applications : Book of abstracts. 2019;:40-40.
https://hdl.handle.net/21.15107/rcub_vinar_12137 .

Jakšić, Aleksandar, Vasović, Nikola, Stanković, Srboljub, Duan, Russell, "Comprehensive characterisation of Tyndall National Institute RADFETs for commercial applications in various fields" in RAP 2019 : International conference on radiation applications : Book of abstracts (2019):40-40,
https://hdl.handle.net/21.15107/rcub_vinar_12137 .

TY  - CONF
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Stanković, Srboljub
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12153
AB  - Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters, are discrete p-channel MOSFETs with the gate oxide engineered for increased radiation sensitivity. RADFETs are small, require very little or no power during operation, read-out is simple and non-destructive, and their electronic signal is suitable for integration with the electronics systems. For these reasons RADFETs have found applications in quality assurance of radiotherapy, dose monitoring in high energy physics laboratories, accidental personal dosimetry, and space. Lower dose applications, such as e.g. occupational personal dosimetry and radiology, are currently out of reach owing to inherent sensitivity limits of the standard RADFET technology. Tyndall National Institute has been involved in RADFET research and development, fabrication, and commercialisation for several decades and has acquired significant experience in the technology and applications. This paper presents Tyndall recent efforts in RADFET manufacturing and characterisation for different applications and discusses possible approaches towards increased sensitivity of the technology, including standard and stacked RADFETs.
PB  - Niš : University of Niš, Faculty of Electronic Engineering
C3  - RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts
T1  - Sensitivity of standard and stacked RADFET dosimeters
SP  - 194
EP  - 194
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12153
ER  - 

@conference{
author = "Jakšić, Aleksandar and Vasović, Nikola and Stanković, Srboljub",
year = "2016",
abstract = "Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters, are discrete p-channel MOSFETs with the gate oxide engineered for increased radiation sensitivity. RADFETs are small, require very little or no power during operation, read-out is simple and non-destructive, and their electronic signal is suitable for integration with the electronics systems. For these reasons RADFETs have found applications in quality assurance of radiotherapy, dose monitoring in high energy physics laboratories, accidental personal dosimetry, and space. Lower dose applications, such as e.g. occupational personal dosimetry and radiology, are currently out of reach owing to inherent sensitivity limits of the standard RADFET technology. Tyndall National Institute has been involved in RADFET research and development, fabrication, and commercialisation for several decades and has acquired significant experience in the technology and applications. This paper presents Tyndall recent efforts in RADFET manufacturing and characterisation for different applications and discusses possible approaches towards increased sensitivity of the technology, including standard and stacked RADFETs.",
publisher = "Niš : University of Niš, Faculty of Electronic Engineering",
journal = "RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts",
title = "Sensitivity of standard and stacked RADFET dosimeters",
pages = "194-194",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12153"
}

Jakšić, A., Vasović, N.,& Stanković, S.. (2016). Sensitivity of standard and stacked RADFET dosimeters. in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts
Niš : University of Niš, Faculty of Electronic Engineering., 194-194.
https://hdl.handle.net/21.15107/rcub_vinar_12153

Jakšić A, Vasović N, Stanković S. Sensitivity of standard and stacked RADFET dosimeters. in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts. 2016;:194-194.
https://hdl.handle.net/21.15107/rcub_vinar_12153 .

Jakšić, Aleksandar, Vasović, Nikola, Stanković, Srboljub, "Sensitivity of standard and stacked RADFET dosimeters" in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts (2016):194-194,
https://hdl.handle.net/21.15107/rcub_vinar_12153 .

TY  - CONF
AU  - Jakšić, Aleksandar
AU  - Vasović, Nikola
AU  - Stanković, Srboljub
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12152
AB  - Radiation environment in space is very complex, with varying contributions from photons, electrons, protons, and heavy ions. There is a need to measure radiation dose received by the astronauts onboard International Space Station (ISS), and the European Space Agency (ESA) has been supporting a collaborative research project aimed at development of a personal dosimeter for European astronauts at ISS. The development of the personal dosimeter system is in the final phase, with the launch expected in the second half of 2015. The system is called “European Crew Personal Active Dosimeter (EuCPAD)” and consists of a base unit and several mobile units. Base unit is stationery and houses system electronics, Tissue Equivalent Proportional Counter (TEPC), and charging slots for mobile units. Mobile units are worn by the astronauts during their daily activities and consist of four dosimetric modules: thin silicon diode, thick silicon diode, Direct Ion Storage (DIS) dosimeter, and Radiation Sensing Field Effect Transistor (RADFET).  We describe the EuCPAD system and our efforts in development of the RADFET module for the EuCPAD mobile unit.
PB  - Niš : RAD Association
C3  - RAD 2015 : International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts
T1  - Development of RADFET detector for personal dosimeter system for European astronauts
SP  - 171
EP  - 171
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12152
ER  - 

@conference{
author = "Jakšić, Aleksandar and Vasović, Nikola and Stanković, Srboljub",
year = "2015",
abstract = "Radiation environment in space is very complex, with varying contributions from photons, electrons, protons, and heavy ions. There is a need to measure radiation dose received by the astronauts onboard International Space Station (ISS), and the European Space Agency (ESA) has been supporting a collaborative research project aimed at development of a personal dosimeter for European astronauts at ISS. The development of the personal dosimeter system is in the final phase, with the launch expected in the second half of 2015. The system is called “European Crew Personal Active Dosimeter (EuCPAD)” and consists of a base unit and several mobile units. Base unit is stationery and houses system electronics, Tissue Equivalent Proportional Counter (TEPC), and charging slots for mobile units. Mobile units are worn by the astronauts during their daily activities and consist of four dosimetric modules: thin silicon diode, thick silicon diode, Direct Ion Storage (DIS) dosimeter, and Radiation Sensing Field Effect Transistor (RADFET).  We describe the EuCPAD system and our efforts in development of the RADFET module for the EuCPAD mobile unit.",
publisher = "Niš : RAD Association",
journal = "RAD 2015 : International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts",
title = "Development of RADFET detector for personal dosimeter system for European astronauts",
pages = "171-171",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12152"
}

Jakšić, A., Vasović, N.,& Stanković, S.. (2015). Development of RADFET detector for personal dosimeter system for European astronauts. in RAD 2015 : International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts
Niš : RAD Association., 171-171.
https://hdl.handle.net/21.15107/rcub_vinar_12152

Jakšić A, Vasović N, Stanković S. Development of RADFET detector for personal dosimeter system for European astronauts. in RAD 2015 : International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts. 2015;:171-171.
https://hdl.handle.net/21.15107/rcub_vinar_12152 .

Jakšić, Aleksandar, Vasović, Nikola, Stanković, Srboljub, "Development of RADFET detector for personal dosimeter system for European astronauts" in RAD 2015 : International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts (2015):171-171,
https://hdl.handle.net/21.15107/rcub_vinar_12152 .