Sensitivity of standard and stacked RADFET dosimeters
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters, are discrete p-channel MOSFETs with the gate oxide engineered for increased radiation sensitivity. RADFETs are small, require very little or no power during operation, read-out is simple and non-destructive, and their electronic signal is suitable for integration with the electronics systems. For these reasons RADFETs have found applications in quality assurance of radiotherapy, dose monitoring in high energy physics laboratories, accidental personal dosimetry, and space. Lower dose applications, such as e.g. occupational personal dosimetry and radiology, are currently out of reach owing to inherent sensitivity limits of the standard RADFET technology. Tyndall National Institute has been involved in RADFET research and development, fabrication, and commercialisation for several decades and has acquired significant experience in the technology and applications. This paper presents Tyndall recent effor...ts in RADFET manufacturing and characterisation for different applications and discusses possible approaches towards increased sensitivity of the technology, including standard and stacked RADFETs.
Извор:
RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts, 2016, 194-194Издавач:
- Niš : University of Niš, Faculty of Electronic Engineering
Напомена:
- Fourth International Conferenceon Radiation and Applications in Various Fields of Research, RAD 2016, May 23-27, 2016, Niš, Serbia
Колекције
Институција/група
VinčaTY - CONF AU - Jakšić, Aleksandar AU - Vasović, Nikola AU - Stanković, Srboljub PY - 2016 UR - https://vinar.vin.bg.ac.rs/handle/123456789/12153 AB - Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters, are discrete p-channel MOSFETs with the gate oxide engineered for increased radiation sensitivity. RADFETs are small, require very little or no power during operation, read-out is simple and non-destructive, and their electronic signal is suitable for integration with the electronics systems. For these reasons RADFETs have found applications in quality assurance of radiotherapy, dose monitoring in high energy physics laboratories, accidental personal dosimetry, and space. Lower dose applications, such as e.g. occupational personal dosimetry and radiology, are currently out of reach owing to inherent sensitivity limits of the standard RADFET technology. Tyndall National Institute has been involved in RADFET research and development, fabrication, and commercialisation for several decades and has acquired significant experience in the technology and applications. This paper presents Tyndall recent efforts in RADFET manufacturing and characterisation for different applications and discusses possible approaches towards increased sensitivity of the technology, including standard and stacked RADFETs. PB - Niš : University of Niš, Faculty of Electronic Engineering C3 - RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts T1 - Sensitivity of standard and stacked RADFET dosimeters SP - 194 EP - 194 UR - https://hdl.handle.net/21.15107/rcub_vinar_12153 ER -
@conference{ author = "Jakšić, Aleksandar and Vasović, Nikola and Stanković, Srboljub", year = "2016", abstract = "Radiation Sensing Field Effect Transistors (RADFETs), also known as MOSFET dosimeters, are discrete p-channel MOSFETs with the gate oxide engineered for increased radiation sensitivity. RADFETs are small, require very little or no power during operation, read-out is simple and non-destructive, and their electronic signal is suitable for integration with the electronics systems. For these reasons RADFETs have found applications in quality assurance of radiotherapy, dose monitoring in high energy physics laboratories, accidental personal dosimetry, and space. Lower dose applications, such as e.g. occupational personal dosimetry and radiology, are currently out of reach owing to inherent sensitivity limits of the standard RADFET technology. Tyndall National Institute has been involved in RADFET research and development, fabrication, and commercialisation for several decades and has acquired significant experience in the technology and applications. This paper presents Tyndall recent efforts in RADFET manufacturing and characterisation for different applications and discusses possible approaches towards increased sensitivity of the technology, including standard and stacked RADFETs.", publisher = "Niš : University of Niš, Faculty of Electronic Engineering", journal = "RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts", title = "Sensitivity of standard and stacked RADFET dosimeters", pages = "194-194", url = "https://hdl.handle.net/21.15107/rcub_vinar_12153" }
Jakšić, A., Vasović, N.,& Stanković, S.. (2016). Sensitivity of standard and stacked RADFET dosimeters. in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts Niš : University of Niš, Faculty of Electronic Engineering., 194-194. https://hdl.handle.net/21.15107/rcub_vinar_12153
Jakšić A, Vasović N, Stanković S. Sensitivity of standard and stacked RADFET dosimeters. in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts. 2016;:194-194. https://hdl.handle.net/21.15107/rcub_vinar_12153 .
Jakšić, Aleksandar, Vasović, Nikola, Stanković, Srboljub, "Sensitivity of standard and stacked RADFET dosimeters" in RAD 2016 : 4th International Conference on Radiation and Applications in Various Fields of Research : Book of abstracts (2016):194-194, https://hdl.handle.net/21.15107/rcub_vinar_12153 .