TY  - JOUR
AU  - Pejovic, Svetlana
AU  - Bošnjaković, Petar
AU  - Ciraj-Bjelac, Olivera
AU  - Pejovic, Momcilo M.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5550
AB  - The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 mu m and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as a function of the absorbed dose and time after irradiation. The dosimeters with the 1-mu m-thick oxide layer can be effectively used for measuring doses in the 0.1-5 Gy range. The dosimeters with 400-nm-thick oxide layer are suitable for measuring doses above 5 Gy. Both types of the dosimeters retain dosimetric information for long periods of time. (C) 2013 Elsevier Ltd. All rights reserved.
T2  - Applied Radiation and Isotopes
T1  - Characteristics of a pMOSFET suitable for use in radiotherapy
VL  - 77
SP  - 44
EP  - 49
DO  - 10.1016/j.apradiso.2013.02.012
ER  - 

@article{
author = "Pejovic, Svetlana and Bošnjaković, Petar and Ciraj-Bjelac, Olivera and Pejovic, Momcilo M.",
year = "2013",
abstract = "The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 mu m and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as a function of the absorbed dose and time after irradiation. The dosimeters with the 1-mu m-thick oxide layer can be effectively used for measuring doses in the 0.1-5 Gy range. The dosimeters with 400-nm-thick oxide layer are suitable for measuring doses above 5 Gy. Both types of the dosimeters retain dosimetric information for long periods of time. (C) 2013 Elsevier Ltd. All rights reserved.",
journal = "Applied Radiation and Isotopes",
title = "Characteristics of a pMOSFET suitable for use in radiotherapy",
volume = "77",
pages = "44-49",
doi = "10.1016/j.apradiso.2013.02.012"
}

Pejovic, S., Bošnjaković, P., Ciraj-Bjelac, O.,& Pejovic, M. M.. (2013). Characteristics of a pMOSFET suitable for use in radiotherapy. in Applied Radiation and Isotopes, 77, 44-49.
https://doi.org/10.1016/j.apradiso.2013.02.012

Pejovic S, Bošnjaković P, Ciraj-Bjelac O, Pejovic MM. Characteristics of a pMOSFET suitable for use in radiotherapy. in Applied Radiation and Isotopes. 2013;77:44-49.
doi:10.1016/j.apradiso.2013.02.012 .

Pejovic, Svetlana, Bošnjaković, Petar, Ciraj-Bjelac, Olivera, Pejovic, Momcilo M., "Characteristics of a pMOSFET suitable for use in radiotherapy" in Applied Radiation and Isotopes, 77 (2013):44-49,
https://doi.org/10.1016/j.apradiso.2013.02.012 . .

TY  - JOUR
AU  - Pejovic, Momcilo M.
AU  - Pejović, Svetlana M.
AU  - Dolićanin, Edin C.
AU  - Lazarević, Đorđe R.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4634
AB  - Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.
T2  - Nuclear technology and radiation protection
T1  - Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides
VL  - 26
IS  - 3
SP  - 261
EP  - 265
DO  - 10.2298/NTRP1103261P
ER  - 

@article{
author = "Pejovic, Momcilo M. and Pejović, Svetlana M. and Dolićanin, Edin C. and Lazarević, Đorđe R.",
year = "2011",
abstract = "Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.",
journal = "Nuclear technology and radiation protection",
title = "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides",
volume = "26",
number = "3",
pages = "261-265",
doi = "10.2298/NTRP1103261P"
}

Pejovic, M. M., Pejović, S. M., Dolićanin, E. C.,& Lazarević, Đ. R.. (2011). Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection, 26(3), 261-265.
https://doi.org/10.2298/NTRP1103261P

Pejovic MM, Pejović SM, Dolićanin EC, Lazarević ĐR. Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection. 2011;26(3):261-265.
doi:10.2298/NTRP1103261P .

Pejovic, Momcilo M., Pejović, Svetlana M., Dolićanin, Edin C., Lazarević, Đorđe R., "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides" in Nuclear technology and radiation protection, 26, no. 3 (2011):261-265,
https://doi.org/10.2298/NTRP1103261P . .