Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides
Апстракт
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.
Кључне речи:
pMOS dosimeter / gamma-ray irradiation / threshold voltage shift / absorbed doseИзвор:
Nuclear technology and radiation protection, 2011, 26, 3, 261-265Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-MESTD-Basic Research (BR or ON)-171007)
DOI: 10.2298/NTRP1103261P
ISSN: 1451-3994
WoS: 000298726200013
Scopus: 2-s2.0-84857007667
Колекције
Институција/група
VinčaTY - JOUR AU - Pejovic, Momcilo M. AU - Pejović, Svetlana M. AU - Dolićanin, Edin C. AU - Lazarević, Đorđe R. PY - 2011 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4634 AB - Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing. T2 - Nuclear technology and radiation protection T1 - Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides VL - 26 IS - 3 SP - 261 EP - 265 DO - 10.2298/NTRP1103261P ER -
@article{ author = "Pejovic, Momcilo M. and Pejović, Svetlana M. and Dolićanin, Edin C. and Lazarević, Đorđe R.", year = "2011", abstract = "Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.", journal = "Nuclear technology and radiation protection", title = "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides", volume = "26", number = "3", pages = "261-265", doi = "10.2298/NTRP1103261P" }
Pejovic, M. M., Pejović, S. M., Dolićanin, E. C.,& Lazarević, Đ. R.. (2011). Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection, 26(3), 261-265. https://doi.org/10.2298/NTRP1103261P
Pejovic MM, Pejović SM, Dolićanin EC, Lazarević ĐR. Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection. 2011;26(3):261-265. doi:10.2298/NTRP1103261P .
Pejovic, Momcilo M., Pejović, Svetlana M., Dolićanin, Edin C., Lazarević, Đorđe R., "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides" in Nuclear technology and radiation protection, 26, no. 3 (2011):261-265, https://doi.org/10.2298/NTRP1103261P . .