Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides
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Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.
Кључне речи:pMOS dosimeter / gamma-ray irradiation / threshold voltage shift / absorbed dose
Извор:Nuclear technology and radiation protection, 2011, 26, 3, 261-265
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-171007)
ISSN: 1451-3994 (print)