TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Paneta, Valentina
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Kokkoris, Michael
AU  - Kopsalis, Ioannis
AU  - Petrović, Srđan M.
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5885
AB  - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
VL  - 320
SP  - 6
EP  - 11
DO  - 10.1016/j.nimb.2013.11.020
ER  - 

@article{
author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči",
year = "2014",
abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM",
volume = "320",
pages = "6-11",
doi = "10.1016/j.nimb.2013.11.020"
}

Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11.
https://doi.org/10.1016/j.nimb.2013.11.020

Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11.
doi:10.1016/j.nimb.2013.11.020 .

Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11,
https://doi.org/10.1016/j.nimb.2013.11.020 . .