TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Živanović, E.
AU  - Stanković, Srboljub
AU  - Anđelković, M.
AU  - Ristić, G.
AU  - Paskleva, A.
AU  - Spassov, D.
AU  - Danković, Danijel
AU  - Manić, I.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12120
AB  - This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 33rd International Conference on Microelectronics : Proceedings book
T1  - Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation
SP  - 277
EP  - 280
DO  - 10.1109/MIEL58498.2023.10315932
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Živanović, E. and Stanković, Srboljub and Anđelković, M. and Ristić, G. and Paskleva, A. and Spassov, D. and Danković, Danijel and Manić, I.",
year = "2023",
abstract = "This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 33rd International Conference on Microelectronics : Proceedings book",
title = "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation",
pages = "277-280",
doi = "10.1109/MIEL58498.2023.10315932"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Živanović, E., Stanković, S., Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, D.,& Manić, I.. (2023). Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 277-280.
https://doi.org/10.1109/MIEL58498.2023.10315932

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Živanović E, Stanković S, Anđelković M, Ristić G, Paskleva A, Spassov D, Danković D, Manić I. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book. 2023;:277-280.
doi:10.1109/MIEL58498.2023.10315932 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Živanović, E., Stanković, Srboljub, Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, Danijel, Manić, I., "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation" in MIEL : 33rd International Conference on Microelectronics : Proceedings book (2023):277-280,
https://doi.org/10.1109/MIEL58498.2023.10315932 . .

TY  - JOUR
AU  - Stojadinović, N.
AU  - Đorić-Veljković, S.
AU  - Davidović, V.
AU  - Golubović, S.
AU  - Stanković, Srboljub
AU  - Prijić, A.
AU  - Prijić, Z.
AU  - Manić, I.
AU  - Danković, D.
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12129
AB  - In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.
T2  - Microelectronics Reliability
T1  - NBTI and irradiation related degradation mechanisms in power VDMOS transistors
VL  - 88-90
SP  - 135
EP  - 141
DO  - 10.1016/j.microrel.2018.07.138
ER  - 

@article{
author = "Stojadinović, N. and Đorić-Veljković, S. and Davidović, V. and Golubović, S. and Stanković, Srboljub and Prijić, A. and Prijić, Z. and Manić, I. and Danković, D.",
year = "2018",
abstract = "In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.",
journal = "Microelectronics Reliability",
title = "NBTI and irradiation related degradation mechanisms in power VDMOS transistors",
volume = "88-90",
pages = "135-141",
doi = "10.1016/j.microrel.2018.07.138"
}

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I.,& Danković, D.. (2018). NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability, 88-90, 135-141.
https://doi.org/10.1016/j.microrel.2018.07.138

Stojadinović N, Đorić-Veljković S, Davidović V, Golubović S, Stanković S, Prijić A, Prijić Z, Manić I, Danković D. NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability. 2018;88-90:135-141.
doi:10.1016/j.microrel.2018.07.138 .

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, Srboljub, Prijić, A., Prijić, Z., Manić, I., Danković, D., "NBTI and irradiation related degradation mechanisms in power VDMOS transistors" in Microelectronics Reliability, 88-90 (2018):135-141,
https://doi.org/10.1016/j.microrel.2018.07.138 . .