TY  - JOUR
AU  - Shtereva, K. S.
AU  - Novotny, I.
AU  - Tvarozek, V.
AU  - Vojs, Marian
AU  - Flickyngerova, S.
AU  - Sutta, P.
AU  - Vincze, A.
AU  - Milosavljević, Momir
AU  - Jeynes, C.
AU  - Peng, N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5518
AB  - The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.
T2  - ECS Journal of Solid State Science and Technology
T1  - Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
VL  - 1
IS  - 5
SP  - P237
EP  - P240
DO  - 10.1149/2.003206jss
ER  - 

@article{
author = "Shtereva, K. S. and Novotny, I. and Tvarozek, V. and Vojs, Marian and Flickyngerova, S. and Sutta, P. and Vincze, A. and Milosavljević, Momir and Jeynes, C. and Peng, N.",
year = "2012",
abstract = "The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.",
journal = "ECS Journal of Solid State Science and Technology",
title = "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation",
volume = "1",
number = "5",
pages = "P237-P240",
doi = "10.1149/2.003206jss"
}

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, M., Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, M., Jeynes, C.,& Peng, N.. (2012). Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology, 1(5), P237-P240.
https://doi.org/10.1149/2.003206jss

Shtereva KS, Novotny I, Tvarozek V, Vojs M, Flickyngerova S, Sutta P, Vincze A, Milosavljević M, Jeynes C, Peng N. Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology. 2012;1(5):P237-P240.
doi:10.1149/2.003206jss .

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, Marian, Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, Momir, Jeynes, C., Peng, N., "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation" in ECS Journal of Solid State Science and Technology, 1, no. 5 (2012):P237-P240,
https://doi.org/10.1149/2.003206jss . .