TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Lagoyannis, Anastasios
AU  - Paneta, Valentina
AU  - Harissopulos, S.
AU  - Telečki, Igor N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4749
AB  - This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
VL  - 274
SP  - 87
EP  - 92
DO  - 10.1016/j.nimb.2011.12.008
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Lagoyannis, Anastasios and Paneta, Valentina and Harissopulos, S. and Telečki, Igor N.",
year = "2012",
abstract = "This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals",
volume = "274",
pages = "87-92",
doi = "10.1016/j.nimb.2011.12.008"
}

Erich, M., Petrović, S. M., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S.,& Telečki, I. N.. (2012). Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274, 87-92.
https://doi.org/10.1016/j.nimb.2011.12.008

Erich M, Petrović SM, Kokkoris M, Lagoyannis A, Paneta V, Harissopulos S, Telečki IN. Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;274:87-92.
doi:10.1016/j.nimb.2011.12.008 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Lagoyannis, Anastasios, Paneta, Valentina, Harissopulos, S., Telečki, Igor N., "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274 (2012):87-92,
https://doi.org/10.1016/j.nimb.2011.12.008 . .