TY  - CONF
AU  - Milinović, Velimir
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Leib, K. P.
AU  - Milosavljević, Momir
AU  - Sahoo, P. K.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6644
AB  - Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.
C3  - AIP Conference Proceedings
T1  - Ion beam mixing at crystalline and amorphous Fe/Si interfaces
VL  - 876
SP  - 209
EP  - +
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6644
ER  - 

@conference{
author = "Milinović, Velimir and Zhang, Kun and Bibić, Nataša M. and Leib, K. P. and Milosavljević, Momir and Sahoo, P. K.",
year = "2006",
abstract = "Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.",
journal = "AIP Conference Proceedings",
title = "Ion beam mixing at crystalline and amorphous Fe/Si interfaces",
volume = "876",
pages = "209-+",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6644"
}

Milinović, V., Zhang, K., Bibić, N. M., Leib, K. P., Milosavljević, M.,& Sahoo, P. K.. (2006). Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings, 876, 209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644

Milinović V, Zhang K, Bibić NM, Leib KP, Milosavljević M, Sahoo PK. Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings. 2006;876:209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644 .

Milinović, Velimir, Zhang, Kun, Bibić, Nataša M., Leib, K. P., Milosavljević, Momir, Sahoo, P. K., "Ion beam mixing at crystalline and amorphous Fe/Si interfaces" in AIP Conference Proceedings, 876 (2006):209-+,
https://hdl.handle.net/21.15107/rcub_vinar_6644 .