TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 

@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}

Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035

Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .

Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .

TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Manić, Ivica
AU  - Golubović, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dentcho
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stanković, Srboljub
AU  - Danković, Danijel
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12119
AB  - The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 32nd International Conference on Microelectronics : Proceedings book
T1  - Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors
SP  - 345
EP  - 350
DO  - 10.1109/MIEL52794.2021.9569154
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Manić, Ivica and Golubović, Snežana and Paskaleva, Albena and Spassov, Dentcho and Prijić, Zoran and Prijić, Aneta and Stanković, Srboljub and Danković, Danijel",
year = "2021",
abstract = "The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 32nd International Conference on Microelectronics : Proceedings book",
title = "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors",
pages = "345-350",
doi = "10.1109/MIEL52794.2021.9569154"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Manić, I., Golubović, S., Paskaleva, A., Spassov, D., Prijić, Z., Prijić, A., Stanković, S.,& Danković, D.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 345-350.
https://doi.org/10.1109/MIEL52794.2021.9569154

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Manić I, Golubović S, Paskaleva A, Spassov D, Prijić Z, Prijić A, Stanković S, Danković D. Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book. 2021;:345-350.
doi:10.1109/MIEL52794.2021.9569154 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Manić, Ivica, Golubović, Snežana, Paskaleva, Albena, Spassov, Dentcho, Prijić, Zoran, Prijić, Aneta, Stanković, Srboljub, Danković, Danijel, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors" in MIEL : 32nd International Conference on Microelectronics : Proceedings book (2021):345-350,
https://doi.org/10.1109/MIEL52794.2021.9569154 . .

TY  - JOUR
AU  - Davidović, Vojkan
AU  - Danković, Danijel
AU  - Golubović, Snežana
AU  - Đorić-Veljković, Snežana
AU  - Manić, Ivica
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stojadinović, Ninoslav
AU  - Stanković, Srboljub
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12131
AB  - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
T2  - Facta universitatis - series: Electronics and Energetics
T1  - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
VL  - 31
IS  - 3
SP  - 367
EP  - 388
DO  - 10.2298/FUEE1803367D
ER  - 

@article{
author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub",
year = "2018",
abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.",
journal = "Facta universitatis - series: Electronics and Energetics",
title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs",
volume = "31",
number = "3",
pages = "367-388",
doi = "10.2298/FUEE1803367D"
}

Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388.
https://doi.org/10.2298/FUEE1803367D

Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388.
doi:10.2298/FUEE1803367D .

Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388,
https://doi.org/10.2298/FUEE1803367D . .