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Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films
dc.creator | Popović, Maja | |
dc.creator | Novaković, Mirjana M. | |
dc.creator | Šiljegović, Milorad | |
dc.creator | Bibić, Nataša M. | |
dc.date.accessioned | 2018-03-03T14:48:40Z | |
dc.date.available | 2018-03-03T14:48:40Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0168-583X | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/6957 | |
dc.description.abstract | This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved. | en |
dc.rights | restrictedAccess | en |
dc.source | Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms | en |
dc.subject | Titanium nitride | en |
dc.subject | Ion irradiation | en |
dc.subject | TEM | en |
dc.subject | RBS | en |
dc.subject | XRD | en |
dc.title | Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films | en |
dc.type | article | en |
dcterms.abstract | Новаковић Мирјана; Поповић Маја; Бибиц, Н.; Шиљеговић Милорад; | |
dc.citation.volume | 279 | |
dc.citation.spage | 144 | |
dc.citation.epage | 146 | |
dc.identifier.wos | 000303637500034 | |
dc.identifier.doi | 10.1016/j.nimb.2011.10.033 | |
dc.citation.rank | M21 | |
dc.description.other | 5th International Conference on Elementary Processes in Atomic Systems (CEPAS), Jun 21-25, 2011, Belgrade, Serbia | en |
dc.identifier.scopus | 2-s2.0-84859581891 |
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