Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films
Abstract
This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:
Titanium nitride / Ion irradiation / TEM / RBS / XRDSource:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012, 279, 144-146Note:
- 5th International Conference on Elementary Processes in Atomic Systems (CEPAS), Jun 21-25, 2011, Belgrade, Serbia
DOI: 10.1016/j.nimb.2011.10.033
ISSN: 0168-583X
WoS: 000303637500034
Scopus: 2-s2.0-84859581891
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Institution/Community
VinčaTY - JOUR AU - Popović, Maja AU - Novaković, Mirjana M. AU - Šiljegović, Milorad AU - Bibić, Nataša M. PY - 2012 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6957 AB - This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved. T2 - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms T1 - Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films VL - 279 SP - 144 EP - 146 DO - 10.1016/j.nimb.2011.10.033 ER -
@article{ author = "Popović, Maja and Novaković, Mirjana M. and Šiljegović, Milorad and Bibić, Nataša M.", year = "2012", abstract = "This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved.", journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms", title = "Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films", volume = "279", pages = "144-146", doi = "10.1016/j.nimb.2011.10.033" }
Popović, M., Novaković, M. M., Šiljegović, M.,& Bibić, N. M.. (2012). Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 279, 144-146. https://doi.org/10.1016/j.nimb.2011.10.033
Popović M, Novaković MM, Šiljegović M, Bibić NM. Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;279:144-146. doi:10.1016/j.nimb.2011.10.033 .
Popović, Maja, Novaković, Mirjana M., Šiljegović, Milorad, Bibić, Nataša M., "Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 279 (2012):144-146, https://doi.org/10.1016/j.nimb.2011.10.033 . .