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Energy loss straggling of low energy alpha particles in a medium composed of polyatomic and diatomic molecules
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
The results of the measurement of the energy straggling of low energy alpha particles in the polyatomic and diatomic molecule media are reported. A general analytical formula for straggling widths of light ions, obtained ...
Antioxidant action in irradiated polypropylene studied by ultraviolet spectroscopy
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1999)
Ultraviolet spectrum of 0.2 mm thick film of polypropylene containing 0.5% ORGANOX 1010 showed that in the sample prepared by slow cooling about 15% of the antioxidant reacted during the preparation process. The difference ...
Ion implanted silicides studies by frequency noise level measurements
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and good temperature stability are used for fabrication ...
Radioactive resistance of elements for over-voltage protection of low-voltage systems
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1998)
Aim of this work is to examine the over-voltage protection under the ionizing radiation influence. The use of modern electronic devices (nuclear, military and space technology) in the conditions of ionizing radiation brings ...
RBS/simulated annealing analysis of silicide formation in Fe/Si systems
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1998)
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between ...
Frequency noise level of as ion implanted TiN-Ti-Si structures
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
This paper presents a possibility of using frequency noise level measurements to study the properties of Ti silicides. We have sputter deposited sequentially a 100 nm thick titanium layer and a 50 nm TiN layer on p-type ...
Decay of zero-degree focusing of channeled ions
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
We present here a study of the effect of zero-degree focusing of C6+ ions moving along the (100) channels of a Si crystal. The ion energy is 25 MeV and the thickness of the crystal is varied from 0 to 5000 atomic layers. ...
Angular distributions of ions transmitted through a very thin crystal
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
The angular distributions of C6+ ions transmitted through a (100) Si very thin crystal are considered. The ion energy is 25 MeV while the thickness of the crystal is varied from 54 to 540 atomic layers. The angular ...
Sputtering yield and morphological changes of TiB2 coatings induced by different incident beams
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1996)
The properties of TiB2 coatings deposited by direct electron-beam evaporation and by plasma spray deposition as well as their behavior during the interaction with the energetic beam are discussed. These coatings are ...