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Pulsed TEA CO2 laser surface modifications of silicon
dc.creator | Trtica, Milan | |
dc.creator | Gaković, Biljana M. | |
dc.date.accessioned | 2018-03-01T19:13:50Z | |
dc.date.available | 2018-03-01T19:13:50Z | |
dc.date.issued | 2003 | |
dc.identifier.issn | 0169-4332 | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/2604 | |
dc.description.abstract | The interaction of a transversely excited atmospheric (TEA) CO, laser, pulse duration of about 2 mus (FWHM of initial spike = 120 ns), with p-type single crystalline silicon doped by boron, was studied. The results have shown that the silicon was surface modified by the laser beam of 12.0 J cm(-2) energy density. The energy absorbed from the CO, laser beam is converted partially into thermal energy, which generates a series of effects such as melting, vaporisation of molten material, shock waves, etc. Morphological manifestations on the silicon surface are: nonuniform modifications (central zone of interaction); wave-like periodical microstructure (inner periphery zone); hydrodynamical structure-like droplets (outer periphery zone). Wave-like microstructure consists of periodic parallel fringes with a period of about 0.8 mum. Formation of these wave-like microstructures is very complex. Explanation includes a consideration of the laser-induced periodic surface structure (LIPSS) effect. The process of the CO2 laser interaction with silicon was not initially accompanied by plasma. Plasma, in the form of a spark, typically appeared after about 100 cumulated laser pulses. (C) 2002 Elsevier Science B.V. All rights reserved. | en |
dc.rights | restrictedAccess | en |
dc.source | Applied Surface Science | en |
dc.subject | laser surface modification | en |
dc.subject | silicon | en |
dc.subject | laser-induced periodic microstructure | en |
dc.subject | pulsed TEA carbon dioxide laser | en |
dc.title | Pulsed TEA CO2 laser surface modifications of silicon | en |
dc.type | article | en |
dcterms.abstract | Тртица Милан; Гаковић Биљана М; | |
dc.citation.volume | 205 | |
dc.citation.issue | 1-4 | |
dc.citation.spage | 336 | |
dc.citation.epage | 342 | |
dc.identifier.wos | 000180675100042 | |
dc.identifier.doi | 10.1016/S0169-4332(02)01156-X | |
dc.citation.other | Article Number: PII S0169-4332(02)01156-X | |
dc.citation.rank | M22 | |
dc.identifier.scopus | 2-s2.0-0037204393 |
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