Annealing effects on the properties of TiN thin films
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of similar to 8 nm/min. After deposition the samples were annealed for 1 h at 600 degrees C and 2 h at 700 degrees C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the ...coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.
Ključne reči:
titanium nitride / thin film / sputtering / annealing / TEM / RBS / XRDIzvor:
Processing and Application of Ceramics, 2015, 9, 2, 67-71Finansiranje / projekti:
- Funkcionalni, funkcionalizovani i usavršeni nano materijali (RS-45005)
- Deutsche Forschungsgemeinschaft [436 SER 113/2]
DOI: 10.2298/PAC1502067P
ISSN: 1820-6131; 2406-1034
WoS: 000369366600001
Scopus: 2-s2.0-84938085235
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Popović, Maja AU - Novaković, Mirjana M. AU - Bibić, Nataša M. PY - 2015 UR - https://vinar.vin.bg.ac.rs/handle/123456789/919 AB - The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of similar to 8 nm/min. After deposition the samples were annealed for 1 h at 600 degrees C and 2 h at 700 degrees C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films. T2 - Processing and Application of Ceramics T1 - Annealing effects on the properties of TiN thin films VL - 9 IS - 2 SP - 67 EP - 71 DO - 10.2298/PAC1502067P ER -
@article{ author = "Popović, Maja and Novaković, Mirjana M. and Bibić, Nataša M.", year = "2015", abstract = "The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of similar to 8 nm/min. After deposition the samples were annealed for 1 h at 600 degrees C and 2 h at 700 degrees C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.", journal = "Processing and Application of Ceramics", title = "Annealing effects on the properties of TiN thin films", volume = "9", number = "2", pages = "67-71", doi = "10.2298/PAC1502067P" }
Popović, M., Novaković, M. M.,& Bibić, N. M.. (2015). Annealing effects on the properties of TiN thin films. in Processing and Application of Ceramics, 9(2), 67-71. https://doi.org/10.2298/PAC1502067P
Popović M, Novaković MM, Bibić NM. Annealing effects on the properties of TiN thin films. in Processing and Application of Ceramics. 2015;9(2):67-71. doi:10.2298/PAC1502067P .
Popović, Maja, Novaković, Mirjana M., Bibić, Nataša M., "Annealing effects on the properties of TiN thin films" in Processing and Application of Ceramics, 9, no. 2 (2015):67-71, https://doi.org/10.2298/PAC1502067P . .