Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
Authorized Users Only
1995
Authors
Dramićanin, MiroslavRistovski, Zoran
Nikolić, Pantelija
Vasiljević, Dana
Todorović, Dragan M.
Article (Published version)
Metadata
Show full item recordAbstract
Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
Keywords:
photoacoustic measurements / heat-transmission / semiconductors / Ge single crystalSource:
Physical Review B, 1995, 14226-14232Collections
Institution/Community
VinčaTY - JOUR AU - Dramićanin, Miroslav AU - Ristovski, Zoran AU - Nikolić, Pantelija AU - Vasiljević, Dana AU - Todorović, Dragan M. PY - 1995 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7480 AB - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity. T2 - Physical Review B T1 - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal SP - 14226 EP - 14232 DO - 10.1103/PhysRevB.51.14226 ER -
@article{ author = "Dramićanin, Miroslav and Ristovski, Zoran and Nikolić, Pantelija and Vasiljević, Dana and Todorović, Dragan M.", year = "1995", abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.", journal = "Physical Review B", title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal", pages = "14226-14232", doi = "10.1103/PhysRevB.51.14226" }
Dramićanin, M., Ristovski, Z., Nikolić, P., Vasiljević, D.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B, 14226-14232. https://doi.org/10.1103/PhysRevB.51.14226
Dramićanin M, Ristovski Z, Nikolić P, Vasiljević D, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;:14226-14232. doi:10.1103/PhysRevB.51.14226 .
Dramićanin, Miroslav, Ristovski, Zoran, Nikolić, Pantelija, Vasiljević, Dana, Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B (1995):14226-14232, https://doi.org/10.1103/PhysRevB.51.14226 . .