3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma
Апстракт
The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented.
Извор:
Journal of Physics: Conference Series, 2007, 86Финансирање / пројекти:
- TESLA, Ministry of Science and Environmental Protection
Напомена:
- 5th EU-Japan Symposium on Plasma Processing, Mar 07-09, 2007, Belgrade, Serbia
DOI: 10.1088/1742-6596/86/1/012017
ISSN: 1742-6588
WoS: 000256282900017
Scopus: 2-s2.0-36349033424
Колекције
Институција/група
VinčaTY - CONF AU - Rađenović, Branislav AU - Radmilovic-Radjenovic, Marija PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6757 AB - The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented. C3 - Journal of Physics: Conference Series T1 - 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma VL - 86 DO - 10.1088/1742-6596/86/1/012017 ER -
@conference{ author = "Rađenović, Branislav and Radmilovic-Radjenovic, Marija", year = "2007", abstract = "The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2. The time dependence of the profile charging during SiO2 etching in plasma is presented.", journal = "Journal of Physics: Conference Series", title = "3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma", volume = "86", doi = "10.1088/1742-6596/86/1/012017" }
Rađenović, B.,& Radmilovic-Radjenovic, M.. (2007). 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma. in Journal of Physics: Conference Series, 86. https://doi.org/10.1088/1742-6596/86/1/012017
Rađenović B, Radmilovic-Radjenovic M. 3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma. in Journal of Physics: Conference Series. 2007;86. doi:10.1088/1742-6596/86/1/012017 .
Rađenović, Branislav, Radmilovic-Radjenovic, Marija, "3D Etching profile evolution simulations: Time dependence analysis of the profile charging during SiO2 etching in plasma" in Journal of Physics: Conference Series, 86 (2007), https://doi.org/10.1088/1742-6596/86/1/012017 . .