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dc.creatorBelošević-Čavor, Jelena
dc.creatorCekić, Božidar Đ.
dc.creatorKoteski, Vasil J.
dc.creatorUmićević, Ana
dc.date.accessioned2018-03-03T14:23:40Z
dc.date.available2018-03-03T14:23:40Z
dc.date.issued2007
dc.identifier.issn0921-5093
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/6664
dc.description.abstractUsing the full-potential linearized augmented plane-wave method, we have calculated the electronic structure of the intermetallic compound Hf2Rh and evaluated the electric field gradients (EFGs) at all of the three inequivalent positions (two Hf and one Rh) in its lattice. The calculated result -24.7 x 10(21) V/m(2) for Hf 48f position is in reasonable agreement with the earlier reported experimental data, obtained from time-differential perturbed angular correlation measurements, but the calculated EFG at Hf 16c, -2.8 x 10(21) V/m2, is about two times smaller than the experimental one. In order to improve the agreement with experimental data, we performed the supercell calculations with Ta impurity, including the lattice relaxation. The possible mechanisms of formation of the EFGs at these sites are analyzed and discussed. (C) 2006 Elsevier B.V. All rights reserved.en
dc.rightsrestrictedAccessen
dc.sourceMaterials Science and Engineering. A: Structural Materials Properties Microsten
dc.subjectintermetallicsen
dc.subjectab initio calculationsen
dc.subjectHf2Rhen
dc.subjectelectric field gradienten
dc.titleElectronic structure and electric field gradient calculations for Hf2Rh intermetallic compounden
dc.typearticleen
dcterms.abstractЦекиц, Бозидар; Белошевић-Чавор Јелена; Умићевић, Aна; Котески Васил Ј.;
dc.citation.volume462
dc.citation.issue1-2
dc.citation.spage294
dc.citation.epage296
dc.identifier.wos000247038300054
dc.identifier.doi10.1016/j.msea.2006.02.460
dc.citation.otherSpecial Issue: SI
dc.citation.rankM22
dc.description.otherInternational Symposium on Physics of Materials (ISPMA), Aug 30-Sep 02, 2005, Prague, Czech Republicen
dc.identifier.scopus2-s2.0-34247474003


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