Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates
Само за регистроване кориснике
2007
Аутори
Novaković, Mirjana M.Popović, Maja
Peruško, Davor
Radović, Ivan
Milinović, Velimir
Milosavljević, Momir
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x10(15) and 1x10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. T...he induced crystalline defects yield an increase of electrical resistivity after ion irradiation.
Кључне речи:
CrN layers / electron microscopy / ion implantation / microstructure / nano-particlesИзвор:
Materials Science Forum, 2007, 555, 35-40Финансирање / пројекти:
- Модификација, синтеза и анализа наноструктурних материјала јонским сноповима, гама зрачењем и вакуумским депоновањем (RS-MESTD-MPN2006-2010-141013)
- International Atomic Energy Agency, Vienna
Напомена:
- Research Trends in Contemporary Materials Science, 8th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 04-08, 2006, Herceg Novi, Montenegro
Колекције
Институција/група
VinčaTY - JOUR AU - Novaković, Mirjana M. AU - Popović, Maja AU - Peruško, Davor AU - Radović, Ivan AU - Milinović, Velimir AU - Milosavljević, Momir PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6582 AB - We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x10(15) and 1x10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation. T2 - Materials Science Forum T1 - Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates VL - 555 SP - 35 EP - 40 DO - 10.4028/www.scientific.net/MSF.555.35 ER -
@article{ author = "Novaković, Mirjana M. and Popović, Maja and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Milosavljević, Momir", year = "2007", abstract = "We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x10(15) and 1x10(16) ions/cm(2). Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.", journal = "Materials Science Forum", title = "Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates", volume = "555", pages = "35-40", doi = "10.4028/www.scientific.net/MSF.555.35" }
Novaković, M. M., Popović, M., Peruško, D., Radović, I., Milinović, V.,& Milosavljević, M.. (2007). Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates. in Materials Science Forum, 555, 35-40. https://doi.org/10.4028/www.scientific.net/MSF.555.35
Novaković MM, Popović M, Peruško D, Radović I, Milinović V, Milosavljević M. Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates. in Materials Science Forum. 2007;555:35-40. doi:10.4028/www.scientific.net/MSF.555.35 .
Novaković, Mirjana M., Popović, Maja, Peruško, Davor, Radović, Ivan, Milinović, Velimir, Milosavljević, Momir, "Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates" in Materials Science Forum, 555 (2007):35-40, https://doi.org/10.4028/www.scientific.net/MSF.555.35 . .