Characterization of as implanted silicides by frequency noise level measurements
Apstrakt
Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RES analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially 1/f noise). In our work we compare the RES spectra and low frequency noise spectra of As+ implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of io...n implantation of As+ ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently.
Ključne reči:
ion beam / implantation / surface / silicide / RBS / noise level characterizationIzvor:
Materials Science Forum, 1998, 282-2, 153-156Napomena:
- Advanced Materials and Processes, 2nd Yugoslav Conference on Advanced Materials (YUGOMAT II), Sep 15-19, 1997, Herceg Novi, Yugoslavia
DOI: 10.4028/www.scientific.net/MSF.282-283.153
ISSN: 0255-5476
WoS: 000075079900021
[ Google Scholar ]Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Stojanović, M. AU - Milosavljević, Momir AU - Jeynes, C PY - 1998 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6247 AB - Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RES analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially 1/f noise). In our work we compare the RES spectra and low frequency noise spectra of As+ implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of ion implantation of As+ ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently. T2 - Materials Science Forum T1 - Characterization of as implanted silicides by frequency noise level measurements VL - 282-2 SP - 153 EP - 156 DO - 10.4028/www.scientific.net/MSF.282-283.153 ER -
@article{ author = "Stojanović, M. and Milosavljević, Momir and Jeynes, C", year = "1998", abstract = "Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RES analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially 1/f noise). In our work we compare the RES spectra and low frequency noise spectra of As+ implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of ion implantation of As+ ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently.", journal = "Materials Science Forum", title = "Characterization of as implanted silicides by frequency noise level measurements", volume = "282-2", pages = "153-156", doi = "10.4028/www.scientific.net/MSF.282-283.153" }
Stojanović, M., Milosavljević, M.,& Jeynes, C.. (1998). Characterization of as implanted silicides by frequency noise level measurements. in Materials Science Forum, 282-2, 153-156. https://doi.org/10.4028/www.scientific.net/MSF.282-283.153
Stojanović M, Milosavljević M, Jeynes C. Characterization of as implanted silicides by frequency noise level measurements. in Materials Science Forum. 1998;282-2:153-156. doi:10.4028/www.scientific.net/MSF.282-283.153 .
Stojanović, M., Milosavljević, Momir, Jeynes, C, "Characterization of as implanted silicides by frequency noise level measurements" in Materials Science Forum, 282-2 (1998):153-156, https://doi.org/10.4028/www.scientific.net/MSF.282-283.153 . .