N-channel polysilicon thin film transistors as gamma-ray detectors
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Autori
Jelenkovic, Emil V.Kovačević, Milan S.
Stupar, Dragan Z.
Bajic, Jovan S.
Slankamenac, Miloš P.
Kovačević, Milojko
To, Suet
Članak u časopisu
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.
Ključne reči:
thin film transistors / threshold voltage / drain current / gamma-ray detectorsIzvor:
Measurement Science and Technology, 2013, 24, 10Finansiranje / projekti:
- Razvoj metoda, senzora, i sistema za praćenje kvaliteta vode, vazduha i zemljišta (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43008)
- Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
- Fotonske komponente i sistemi (RS-MESTD-Basic Research (BR or ON)-171011)
- Research Grants Council of the Hong Kong Special Administrative Region, China [PolyU 5316/09E], Research Committee of The Hong Kong Polytechnic University
DOI: 10.1088/0957-0233/24/10/105103
ISSN: 0957-0233; 1361-6501
WoS: 000324621900017
Scopus: 2-s2.0-84884756086
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Jelenkovic, Emil V. AU - Kovačević, Milan S. AU - Stupar, Dragan Z. AU - Bajic, Jovan S. AU - Slankamenac, Miloš P. AU - Kovačević, Milojko AU - To, Suet PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5695 AB - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters. T2 - Measurement Science and Technology T1 - N-channel polysilicon thin film transistors as gamma-ray detectors VL - 24 IS - 10 DO - 10.1088/0957-0233/24/10/105103 ER -
@article{ author = "Jelenkovic, Emil V. and Kovačević, Milan S. and Stupar, Dragan Z. and Bajic, Jovan S. and Slankamenac, Miloš P. and Kovačević, Milojko and To, Suet", year = "2013", abstract = "N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.", journal = "Measurement Science and Technology", title = "N-channel polysilicon thin film transistors as gamma-ray detectors", volume = "24", number = "10", doi = "10.1088/0957-0233/24/10/105103" }
Jelenkovic, E. V., Kovačević, M. S., Stupar, D. Z., Bajic, J. S., Slankamenac, M. P., Kovačević, M.,& To, S.. (2013). N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology, 24(10). https://doi.org/10.1088/0957-0233/24/10/105103
Jelenkovic EV, Kovačević MS, Stupar DZ, Bajic JS, Slankamenac MP, Kovačević M, To S. N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology. 2013;24(10). doi:10.1088/0957-0233/24/10/105103 .
Jelenkovic, Emil V., Kovačević, Milan S., Stupar, Dragan Z., Bajic, Jovan S., Slankamenac, Miloš P., Kovačević, Milojko, To, Suet, "N-channel polysilicon thin film transistors as gamma-ray detectors" in Measurement Science and Technology, 24, no. 10 (2013), https://doi.org/10.1088/0957-0233/24/10/105103 . .