Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
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Berhanuddin, D. D.Lourenco, M. A.
Jeynes, C.
Milosavljević, Momir
Gwilliam, R. M.
Homewood, Kevin P.
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We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samp...les without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
Source:
Journal of Applied Physics, 2012, 112, 10Funding / projects:
- SILAMPS - Silicon integrated lasers and optical amplifiers (EU-FP7-226470)
DOI: 10.1063/1.4766390
ISSN: 0021-8979
WoS: 000311969800011
Scopus: 2-s2.0-84870671225
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VinčaTY - JOUR AU - Berhanuddin, D. D. AU - Lourenco, M. A. AU - Jeynes, C. AU - Milosavljević, Momir AU - Gwilliam, R. M. AU - Homewood, Kevin P. PY - 2012 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5185 AB - We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390] T2 - Journal of Applied Physics T1 - Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre VL - 112 IS - 10 DO - 10.1063/1.4766390 ER -
@article{ author = "Berhanuddin, D. D. and Lourenco, M. A. and Jeynes, C. and Milosavljević, Momir and Gwilliam, R. M. and Homewood, Kevin P.", year = "2012", abstract = "We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]", journal = "Journal of Applied Physics", title = "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre", volume = "112", number = "10", doi = "10.1063/1.4766390" }
Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M.,& Homewood, K. P.. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics, 112(10). https://doi.org/10.1063/1.4766390
Berhanuddin DD, Lourenco MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics. 2012;112(10). doi:10.1063/1.4766390 .
Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, Momir, Gwilliam, R. M., Homewood, Kevin P., "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre" in Journal of Applied Physics, 112, no. 10 (2012), https://doi.org/10.1063/1.4766390 . .