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OPO laser light absorption and evolutionary behaviour of SWCNT thin films

dc.creatorKepić, Dejan P.
dc.creatorMarković, Zoran M.
dc.creatorHolclajtner-Antunović, Ivanka D.
dc.creatorNikolić, M.
dc.creatorDramićanin, Miroslav
dc.creatorMarinović-Cincović, Milena
dc.creatorTodorović-Marković, Biljana
dc.date.accessioned2018-03-01T22:24:28Z
dc.date.available2018-03-01T22:24:28Z
dc.date.issued2012
dc.identifier.issn1454-4164
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/4785
dc.description.abstractIn this paper we report a systematic study on the properties of irradiated SWCNT films by high power, pulsed visible irradiation of OPO laser in the range from 430 nm to 800 nm. Raman analysis showed that metallic and semiconducting SWCNTs were simultaneously affected by irradiation. It was found that laser irradiation had the most prominent effects on SWCNT films at 430 nm wavelength. To our surprise, semiconducting SWCNTs were more affected by irradiation than metallic and as a result several SWCNTs were isolated partially.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/172003/RS//
dc.rightsrestrictedAccessen
dc.sourceJournal of Optoelectronics and Advanced Materialsen
dc.subjectSWCNTen
dc.subjectOPO laseren
dc.subjectRaman spectroscopyen
dc.subjectAtomic force microscopyen
dc.titleOPO laser light absorption and evolutionary behaviour of SWCNT thin filmsen
dc.typearticleen
dcterms.abstractКепић Дејан; Николиц, М.; Тодоровић-Марковић Биљана; Мариновић-Цинцовић Милена; Марковић Зоран; Драмићанин Мирослав; Холцлајтнерантуновиц, И.;
dc.citation.volume14
dc.citation.issue1-2
dc.citation.spage95
dc.citation.epage99
dc.identifier.wos000302579300015
dc.citation.rankM23
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_vinar_4785


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