Structural, optical and electrical properties of argon implanted TiN thin films
Abstract
Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films induced by argon ion irradiation and thermal annealings was studied using various experimental techniques. TiN thin films deposited by dc reactive sputtering on Si substrate were implanted with argon ions at 200 key. As-implanted samples were annealed before or after ion irradiation at 600 degrees C and 700 degrees C, respectively. Rutherford bacicscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy, spectroscopic ellipsometry and electrical measurements were carried out in order to study structural, optical and electrical properties of TiN/Si samples. After irradiation with 200 keV Ar ions the columnar microstructure of TiN was changed and the presence of smaller crystalline grains was observed. Partial Loss of columnar structure observed in implanted samples was completely recovered after annealing at 700 degrees C. Observed chan...ges in microstructure induced by ion irradiation and annealings were correlated with the variation in optical parameters obtained by spectroscopic ellipsometry. It was found that both refractive index and extinction coefficient are strongly dependent on the defects concentration and size of the crystalline grains in TiN layers. (C) 2014 Elsevier Ltd. All rights reserved.
Keywords:
Titanium nitride / Annealing / Ion irradiation / TEM / Ellipsometry / XRDSource:
International Journal of Refractory Metals and Hard Materials, 2015, 48, 318-323Funding / projects:
- Functional, Functionalized and Advanced Nanomaterials (RS-45005)
- Deutsche Forschungsgemeinschaft [436 SER 113/2]
DOI: 10.1016/j.ijrmhm.2014.09.026
ISSN: 0263-4368
WoS: 000347586400045
Scopus: 2-s2.0-84907790130
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Institution/Community
VinčaTY - JOUR AU - Popović, Maja AU - Novaković, Mirjana M. AU - Mitrić, Miodrag AU - Zhang, Kun AU - Bibić, Nataša M. PY - 2015 UR - https://vinar.vin.bg.ac.rs/handle/123456789/344 AB - Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films induced by argon ion irradiation and thermal annealings was studied using various experimental techniques. TiN thin films deposited by dc reactive sputtering on Si substrate were implanted with argon ions at 200 key. As-implanted samples were annealed before or after ion irradiation at 600 degrees C and 700 degrees C, respectively. Rutherford bacicscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy, spectroscopic ellipsometry and electrical measurements were carried out in order to study structural, optical and electrical properties of TiN/Si samples. After irradiation with 200 keV Ar ions the columnar microstructure of TiN was changed and the presence of smaller crystalline grains was observed. Partial Loss of columnar structure observed in implanted samples was completely recovered after annealing at 700 degrees C. Observed changes in microstructure induced by ion irradiation and annealings were correlated with the variation in optical parameters obtained by spectroscopic ellipsometry. It was found that both refractive index and extinction coefficient are strongly dependent on the defects concentration and size of the crystalline grains in TiN layers. (C) 2014 Elsevier Ltd. All rights reserved. T2 - International Journal of Refractory Metals and Hard Materials T1 - Structural, optical and electrical properties of argon implanted TiN thin films VL - 48 SP - 318 EP - 323 DO - 10.1016/j.ijrmhm.2014.09.026 ER -
@article{ author = "Popović, Maja and Novaković, Mirjana M. and Mitrić, Miodrag and Zhang, Kun and Bibić, Nataša M.", year = "2015", abstract = "Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films induced by argon ion irradiation and thermal annealings was studied using various experimental techniques. TiN thin films deposited by dc reactive sputtering on Si substrate were implanted with argon ions at 200 key. As-implanted samples were annealed before or after ion irradiation at 600 degrees C and 700 degrees C, respectively. Rutherford bacicscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy, spectroscopic ellipsometry and electrical measurements were carried out in order to study structural, optical and electrical properties of TiN/Si samples. After irradiation with 200 keV Ar ions the columnar microstructure of TiN was changed and the presence of smaller crystalline grains was observed. Partial Loss of columnar structure observed in implanted samples was completely recovered after annealing at 700 degrees C. Observed changes in microstructure induced by ion irradiation and annealings were correlated with the variation in optical parameters obtained by spectroscopic ellipsometry. It was found that both refractive index and extinction coefficient are strongly dependent on the defects concentration and size of the crystalline grains in TiN layers. (C) 2014 Elsevier Ltd. All rights reserved.", journal = "International Journal of Refractory Metals and Hard Materials", title = "Structural, optical and electrical properties of argon implanted TiN thin films", volume = "48", pages = "318-323", doi = "10.1016/j.ijrmhm.2014.09.026" }
Popović, M., Novaković, M. M., Mitrić, M., Zhang, K.,& Bibić, N. M.. (2015). Structural, optical and electrical properties of argon implanted TiN thin films. in International Journal of Refractory Metals and Hard Materials, 48, 318-323. https://doi.org/10.1016/j.ijrmhm.2014.09.026
Popović M, Novaković MM, Mitrić M, Zhang K, Bibić NM. Structural, optical and electrical properties of argon implanted TiN thin films. in International Journal of Refractory Metals and Hard Materials. 2015;48:318-323. doi:10.1016/j.ijrmhm.2014.09.026 .
Popović, Maja, Novaković, Mirjana M., Mitrić, Miodrag, Zhang, Kun, Bibić, Nataša M., "Structural, optical and electrical properties of argon implanted TiN thin films" in International Journal of Refractory Metals and Hard Materials, 48 (2015):318-323, https://doi.org/10.1016/j.ijrmhm.2014.09.026 . .