Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure
Apstrakt
We present a systematic study of the sheet carrier density and valence-band offset in the GaN/AlxGa1-xN(0001) heterostructure as a function of x from ab initio density-functional methods. We find that the calculated sheet carrier density increases rapidly with x for xless than or equal to0.3 in good agreement with experiments, but beyond this concentration, it quickly saturates to a value of about 2x10(13) cm(-2). The band offset shows a small asymmetry between the Ga-face and N-face interfaces and changes more or less linearly with x, although a small bowing is found. The layer-projected densities of states indicate the formation of the two-dimensional electron gas at the Ga-face interface and confirm the absence of interface states in the gap. (C) 2004 American Institute of Physics.
Izvor:
Journal of Applied Physics, 2004, 95, 10, 5597-5601
DOI: 10.1063/1.1704869
ISSN: 0021-8979
WoS: 000221269300047
Scopus: 2-s2.0-2942612664
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Satpathy, Sashi AU - Popović, Zoran S. AU - Mitchel, WC PY - 2004 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2767 AB - We present a systematic study of the sheet carrier density and valence-band offset in the GaN/AlxGa1-xN(0001) heterostructure as a function of x from ab initio density-functional methods. We find that the calculated sheet carrier density increases rapidly with x for xless than or equal to0.3 in good agreement with experiments, but beyond this concentration, it quickly saturates to a value of about 2x10(13) cm(-2). The band offset shows a small asymmetry between the Ga-face and N-face interfaces and changes more or less linearly with x, although a small bowing is found. The layer-projected densities of states indicate the formation of the two-dimensional electron gas at the Ga-face interface and confirm the absence of interface states in the gap. (C) 2004 American Institute of Physics. T2 - Journal of Applied Physics T1 - Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure VL - 95 IS - 10 SP - 5597 EP - 5601 DO - 10.1063/1.1704869 ER -
@article{ author = "Satpathy, Sashi and Popović, Zoran S. and Mitchel, WC", year = "2004", abstract = "We present a systematic study of the sheet carrier density and valence-band offset in the GaN/AlxGa1-xN(0001) heterostructure as a function of x from ab initio density-functional methods. We find that the calculated sheet carrier density increases rapidly with x for xless than or equal to0.3 in good agreement with experiments, but beyond this concentration, it quickly saturates to a value of about 2x10(13) cm(-2). The band offset shows a small asymmetry between the Ga-face and N-face interfaces and changes more or less linearly with x, although a small bowing is found. The layer-projected densities of states indicate the formation of the two-dimensional electron gas at the Ga-face interface and confirm the absence of interface states in the gap. (C) 2004 American Institute of Physics.", journal = "Journal of Applied Physics", title = "Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure", volume = "95", number = "10", pages = "5597-5601", doi = "10.1063/1.1704869" }
Satpathy, S., Popović, Z. S.,& Mitchel, W.. (2004). Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure. in Journal of Applied Physics, 95(10), 5597-5601. https://doi.org/10.1063/1.1704869
Satpathy S, Popović ZS, Mitchel W. Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure. in Journal of Applied Physics. 2004;95(10):5597-5601. doi:10.1063/1.1704869 .
Satpathy, Sashi, Popović, Zoran S., Mitchel, WC, "Theory of the composition dependence of the band offset and sheet carrier density in the GaN/AlxGa1-xN heterostructure" in Journal of Applied Physics, 95, no. 10 (2004):5597-5601, https://doi.org/10.1063/1.1704869 . .