Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013)

dc.creator	Pejović, Milić M.
dc.creator	Ciraj-Bjelac, Olivera
dc.creator	Kovačević, Milojko
dc.creator	Rajović, Zoran
dc.creator	Ilić, Gvozden
dc.date.accessioned	2021-10-27T09:52:45Z
dc.date.available	2021-10-27T09:52:45Z
dc.date.issued	2013
dc.identifier.issn	1110-662X
dc.identifier.uri	https://vinar.vin.bg.ac.rs/handle/123456789/9743
dc.description.abstract	In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” there was an error in the drawing of Figure 2
dc.relation.isreferencedby	https://vinar.vin.bg.ac.rs/handle/123456789/5602
dc.rights	openAccess
dc.rights.uri	https://creativecommons.org/licenses/by/4.0/
dc.source	International Journal of Photoenergy	en
dc.title	Erratum: Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation (Vol. 33, pg. 1-23, 2013)	en
dc.type	contributionToPeriodical
dc.rights.license	BY
dcterms.abstract	Рајовић, Зоран; Пејовић, Милић М.; Цирај-Бјелац, Оливера; Ковачевић, Милојко; Илић, Гвозден;
dc.identifier.wos	000322343300001
dc.identifier.doi	10.1155/2020/4258307
dc.citation.other	Article Number: 158403
dc.citation.rank	M21
dc.description.other	Link to the corrected article: [https://vinar.vin.bg.ac.rs/handle/123456789/5602]
dc.type.version	publishedVersion
dc.identifier.scopus	2-s2.0-84880903878
dc.identifier.fulltext	https://vinar.vin.bg.ac.rs/bitstream/id/24973/Corrigendum.pdf