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dc.creatorJanosevic, Valentina
dc.creatorMitrić, Miodrag
dc.creatorSavić, Jasmina
dc.creatorValidžić, Ivana Lj.
dc.date.accessioned2018-03-01T16:43:36Z
dc.date.available2018-03-01T16:43:36Z
dc.date.issued2016
dc.identifier.issn1073-5623 (print)
dc.identifier.issn1543-1940 (electronic)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/957
dc.description.abstractOne of the intermediate steps in the organo-colloidal synthesis of crystalline Sb2S3 is a synthesis of spherical amorphous Sb2S3. In order to prove that the synthesized semiconductor can be considered an absorbing material for a solar device, the electronic and photovoltage properties of the amorphized and polycrystalline Sb2S3 thin films deposited by synthesized amorphous nanoparticles were studied. Optical studies revealed that the direct band gap energy was 1.65 eV and, two direct allowed transition of 1.57 and 1.91 eV for polycrystalline and amorphized thin films, respectively. The PL spectra of Sb2S3 showed an emission peak at 1.65 eV for both films. In order to obtain current-voltage (I-V) characteristics, two cells based on the Sb2S3 thin films as both an absorbing material and an electrolyte were designed and made. The observed Sb2S3 thin films, with a thickness of around 10 mu m, are of p-type. The exponential growth of the I-V curves reveals that the cells can work as a generator of electricity. (C) The Minerals, Metals and Materials Society and ASM International 2015en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/172056/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45015/RS//
dc.rightsrestrictedAccessen
dc.sourceMetallurgical and Materials Transactions. A: Physical Metallurgy and Materials Scienceen
dc.titleStructural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Filmsen
dc.typearticleen
dcterms.abstractЈаносевиц, Валентина; Митрић Миодраг; Савић Јасмина; Младеновић Ивана;
dc.citation.volume47A
dc.citation.issue3
dc.citation.spage1460
dc.citation.epage1468
dc.identifier.wos000371308200044
dc.identifier.doi10.1007/s11661-015-3282-9
dc.citation.rankM21
dc.identifier.scopus2-s2.0-84957441499


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