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dc.creatorSpassov, Dencho
dc.creatorPaskaleva, Albena
dc.creatorGuziewicz, Elżbieta
dc.creatorDavidović, Vojkan
dc.creatorStanković, Srboljub J.
dc.creatorĐorić-Veljković, Snežana
dc.creatorIvanov, Tzvetan
dc.creatorStanchev, Todor
dc.creatorStojadinović, Ninoslav
dc.date.accessioned2021-04-13T12:16:03Z
dc.date.available2021-04-13T12:16:03Z
dc.date.issued2021
dc.identifier.issn1996-1944
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/9089
dc.description.abstractHigh-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.en
dc.language.isoen
dc.relationBulgarian National Scientific Fund [KP-06-H37/32]
dc.rightsopenAccess
dc.sourceMaterials
dc.subjectradiation hardnessen
dc.subjecthigh-k dielectricsen
dc.subjectcharge trapping memoriesen
dc.subjectHfO2en
dc.subjectAl2O3 nanolaminatesen
dc.subjectatomic layer deposition (ALD)en
dc.titleRadiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectricsen
dc.typearticleen
dc.rights.licenseBY
dcterms.abstractПаскалева, Aлбена; Спассов, Денцхо; Гузиеwицз, Елżбиета; Давидовић, Војкан; Ђорић-Вељковић, Снежана; Иванов, Тзветан; Станцхев, Тодор; Стојадиновић, Нинослав; Станковић, Србољуб Ј.;
dc.rights.holder© 2021 by the authors
dc.citation.volume14
dc.citation.issue4
dc.citation.spage849
dc.identifier.wos000624113600001
dc.identifier.doi10.3390/ma14040849
dc.identifier.pmid33578892
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85100931834
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs/bitstream/id/22844/materials-14-00849-v2.pdf


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