VinaR - Repository of the Vinča Nuclear Institute
    • English
    • Српски
    • Српски (Serbia)
  • English 
    • English
    • Serbian (Cyrillic)
    • Serbian (Latin)
  • Login
View Item 
  •   Vinar
  • Vinča
  • Radovi istraživača
  • View Item
  •   Vinar
  • Vinča
  • Radovi istraživača
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Thumbnail
2021
Main article [PDF] (3.292Mb)
Authors
Spassov, Dencho
Paskaleva, Albena
Guziewicz, Elżbieta
Davidović, Vojkan
Stanković, Srboljub J.
Đorić-Veljković, Snežana
Ivanov, Tzvetan
Stanchev, Todor
Stojadinović, Ninoslav
Article (Published version)
,
© 2021 by the authors
Metadata
Show full item record
Abstract
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substa...ntial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

Keywords:
radiation hardness / high-k dielectrics / charge trapping memories / HfO2 / Al2O3 nanolaminates / atomic layer deposition (ALD)
Source:
Materials, 2021, 14, 4, 849-
Funding / projects:
  • Bulgarian National Scientific Fund [KP-06-H37/32]

DOI: 10.3390/ma14040849

ISSN: 1996-1944

PubMed: 33578892

WoS: 000624113600001

Scopus: 2-s2.0-85100931834
[ Google Scholar ]
4
URI
https://vinar.vin.bg.ac.rs/handle/123456789/9089
Collections
  • Radovi istraživača
  • 100 - Laboratorija za zaštitu od zračenja i zaštitu životne sredine
Institution/Community
Vinča
TY  - JOUR
AU  - Spassov, Dencho
AU  - Paskaleva, Albena
AU  - Guziewicz, Elżbieta
AU  - Davidović, Vojkan
AU  - Stanković, Srboljub J.
AU  - Đorić-Veljković, Snežana
AU  - Ivanov, Tzvetan
AU  - Stanchev, Todor
AU  - Stojadinović, Ninoslav
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9089
AB  - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
T2  - Materials
T1  - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
VL  - 14
IS  - 4
SP  - 849
DO  - 10.3390/ma14040849
ER  - 
@article{
author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub J. and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav",
year = "2021",
abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.",
journal = "Materials",
title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics",
volume = "14",
number = "4",
pages = "849",
doi = "10.3390/ma14040849"
}
Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S. J., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N.. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković SJ, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials. 2021;14(4):849.
doi:10.3390/ma14040849 .
Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub J., Đorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" in Materials, 14, no. 4 (2021):849,
https://doi.org/10.3390/ma14040849 . .

DSpace software copyright © 2002-2015  DuraSpace
About the VinaR Repository | Send Feedback

OpenAIRERCUB
 

 

All of DSpaceCommunitiesAuthorsTitlesSubjectsThis institutionAuthorsTitlesSubjects

Statistics

View Usage Statistics

DSpace software copyright © 2002-2015  DuraSpace
About the VinaR Repository | Send Feedback

OpenAIRERCUB