Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
Authors
Spassov, DenchoPaskaleva, Albena
Guziewicz, Elżbieta
Davidović, Vojkan
Stanković, Srboljub J.

Đorić-Veljković, Snežana
Ivanov, Tzvetan
Stanchev, Todor
Stojadinović, Ninoslav
Article (Published version)
Metadata
Show full item recordAbstract
High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substa...ntial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
Keywords:
radiation hardness / high-k dielectrics / charge trapping memories / HfO2 / Al2O3 nanolaminates / atomic layer deposition (ALD)Source:
Materials, 2021, 14, 4, 849-Funding / projects:
- Bulgarian National Scientific Fund [KP-06-H37/32]
DOI: 10.3390/ma14040849
ISSN: 1996-1944
PubMed: 33578892
WoS: 000624113600001
Scopus: 2-s2.0-85100931834
Institution/Community
VinčaTY - JOUR AU - Spassov, Dencho AU - Paskaleva, Albena AU - Guziewicz, Elżbieta AU - Davidović, Vojkan AU - Stanković, Srboljub J. AU - Đorić-Veljković, Snežana AU - Ivanov, Tzvetan AU - Stanchev, Todor AU - Stojadinović, Ninoslav PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/9089 AB - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance. T2 - Materials T1 - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics VL - 14 IS - 4 SP - 849 DO - 10.3390/ma14040849 ER -
@article{ author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub J. and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav", year = "2021", abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.", journal = "Materials", title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics", volume = "14", number = "4", pages = "849", doi = "10.3390/ma14040849" }
Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S. J., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N.. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials, 14(4), 849. https://doi.org/10.3390/ma14040849
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković SJ, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials. 2021;14(4):849. doi:10.3390/ma14040849 .
Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub J., Đorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" in Materials, 14, no. 4 (2021):849, https://doi.org/10.3390/ma14040849 . .