Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
AuthorsStanković, Srboljub J.
Davidović, Vojkan S.
Conference object (Published version)
© 2019 IEEE
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The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.
Source:2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019, 181-184
- 31st IEEE International Conference on Microelectronics, MIEL 2019; 16-18. September 2019; Conference Code:153916