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dc.creatorIlić, S.
dc.creatorJevtić, A.
dc.creatorStanković, Srboljub J.
dc.creatorDavidović, Vojkan S.
dc.date.accessioned2020-05-28T09:22:20Z
dc.date.available2020-05-28T09:22:20Z
dc.date.issued2019
dc.identifier.isbn9781728134192
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/8657
dc.description.abstractIn this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.en
dc.language.isoen
dc.publisherIEEE
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171026/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32026/RS//
dc.rightsrestrictedAccess
dc.source2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleFeasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetryen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractДавидовић, В; Илић, С; Јевтић, A; Станковић, С;
dc.rights.holder© 2019 IEEE
dc.citation.spage67
dc.citation.epage70
dc.identifier.doi10.1109/MIEL.2019.8889570
dc.description.other31st IEEE International Conference on Microelectronics, MIEL 2019; 16-18. September 2019; Conference Code:153916
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85075351368


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