Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN
Само за регистроване кориснике
2019
Аутори
Vasco, H. A.Hlatshwayo, Thulani Thokozani
Motloung, Setumo Victor
Mlambo, Mbuso
Mwankemwa, Benard S.
Petrović, Srđan M.
Skuratov, Vladimir A.
Чланак у часопису (Објављена верзија)
,
© 2019 Elsevier Ltd
Метаподаци
Приказ свих података о документуАпстракт
Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.
Кључне речи:
TiN / SPS / Swift heavy ions / Irradiation / Raman spectroscopyИзвор:
Vacuum, 2019, 163, 59-68Финансирање / пројекти:
- National Research Fund of South Africa (Grant 107405)
DOI: 10.1016/j.vacuum.2019.01.054
ISSN: 0042-207X
WoS: 000462690400009
Scopus: 2-s2.0-85061330532
Институција/група
VinčaTY - JOUR AU - Vasco, H. A. AU - Hlatshwayo, Thulani Thokozani AU - Motloung, Setumo Victor AU - Mlambo, Mbuso AU - Mwankemwa, Benard S. AU - Petrović, Srđan M. AU - Skuratov, Vladimir A. PY - 2019 UR - https://vinar.vin.bg.ac.rs/handle/123456789/8056 AB - Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries. T2 - Vacuum T1 - Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN VL - 163 SP - 59 EP - 68 DO - 10.1016/j.vacuum.2019.01.054 ER -
@article{ author = "Vasco, H. A. and Hlatshwayo, Thulani Thokozani and Motloung, Setumo Victor and Mlambo, Mbuso and Mwankemwa, Benard S. and Petrović, Srđan M. and Skuratov, Vladimir A.", year = "2019", abstract = "Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.", journal = "Vacuum", title = "Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN", volume = "163", pages = "59-68", doi = "10.1016/j.vacuum.2019.01.054" }
Vasco, H. A., Hlatshwayo, T. T., Motloung, S. V., Mlambo, M., Mwankemwa, B. S., Petrović, S. M.,& Skuratov, V. A.. (2019). Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN. in Vacuum, 163, 59-68. https://doi.org/10.1016/j.vacuum.2019.01.054
Vasco HA, Hlatshwayo TT, Motloung SV, Mlambo M, Mwankemwa BS, Petrović SM, Skuratov VA. Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN. in Vacuum. 2019;163:59-68. doi:10.1016/j.vacuum.2019.01.054 .
Vasco, H. A., Hlatshwayo, Thulani Thokozani, Motloung, Setumo Victor, Mlambo, Mbuso, Mwankemwa, Benard S., Petrović, Srđan M., Skuratov, Vladimir A., "Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN" in Vacuum, 163 (2019):59-68, https://doi.org/10.1016/j.vacuum.2019.01.054 . .