Show simple item record

dc.creatorPopović, Maja
dc.creatorNovaković, Mirjana M.
dc.creatorZhang, Kun
dc.creatorMitrić, Miodrag
dc.creatorBibić, Nataša M.
dc.creatorRakočević, Zlatko Lj.
dc.date.accessioned2018-10-31T10:53:15Z
dc.date.available2018-10-31T10:53:15Z
dc.date.issued2018
dc.identifier.issn1820-6131 (print)
dc.identifier.issn2406-1034 (electronic)
dc.identifier.urihttp://www.doiserbia.nb.rs/Article.aspx?ID=1820-61311803199P
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/7905
dc.description.abstractPolycrystalline CrN thin films were irradiated with Xe ions. The irradiation-induced modifications on structural and optical properties of the films were investigated. The CrN films were deposited on Si(100) wafers with the thickness of 280 nm, by using DC reactive sputtering. After deposition, the films were implanted at room temperature with 400 keV Xe ions with the fluences of 5-20×1015 ions/cm2. The films were then annealed at 700 °C in vacuum for 2 h. The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical properties were monitored by spectroscopic ellipsometry. We also measured the electrical resistivity of the samples using a four point probe method. RBS analysis reveals that the concentration of Xe in the layers increases with ion fluence reaching the value of around 1.5 at.% for the highest ion dose, at a depth of 73 nm. XRD patterns show that the irradiation results in the decrease of the lattice constant in the range of 0.4160-0.4124 nm. Irradiation also results in the splitting of 200 line indicating the tetragonal distortion of CrN lattice. TEM studies demonstrate that after irradiation the columnar microstructure is partially destroyed within ∼90 nm, introducing a large amount of damage in the CrN layers. Spectroscopic ellipsometry analysis shows that the optical band gap of CrN progressively reduces from 3.47 eV to 2.51 eV with the rise in ion fluence up to 20 1015 ions/cm2. Four point probe measurements of the films indicated that as the Xe ion fluence increases, the electrical resistivity rises from 770 to 1607μ cm. After post-implantation annealing crystalline grains become larger and lattice distortion disappears, which influences optical band gap values and electrical resistivity of CrN. © 2018 University of Novi Sad Faculty of Technology. All rights reserved.
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45005/RS//
dc.rightsopenAccess
dc.sourceProcessing and Application of Ceramics
dc.subjectCrNen
dc.subjectthin filmsen
dc.subjectXRDen
dc.subjectellipsometryen
dc.subjectoptical band gapen
dc.titleCorrelation between damage evolution, structural and optical properties of Xe implanted CrN thin filmsen
dc.typearticleen
dc.rights.licenseBY-NC-ND
dcterms.abstractМитрић, Миодраг; Бибић, Наташа М.; Поповић, Маја; Зханг, Кун; Ракочевић, Златко Љ.; Новаковић, Мирјана М.;
dc.rights.holder© 2018 University of Novi Sad Faculty of Technology
dc.citation.volume12
dc.citation.issue3
dc.citation.spage199
dc.citation.epage208
dc.identifier.wos000446121300001
dc.identifier.doi10.2298/PAC1803199P
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85054549158
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs//bitstream/id/10659/1820-61311803199P.pdf


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record