Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range
Нема приказа
Аутори
Dubajić, MilošDaničić, Aleksandar
Vuković, Nikola
Milanović, Vitomir B.
Radovanović, Jelena V.
Чланак у часопису (Објављена верзија)
,
© 2018, Springer Science+Business Media, LLC, part of Springer Nature
Метаподаци
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In this work we theoretically investigate a possibility to use cubic nitride based multi-layer periodic nanostructure as a semiconductor metamaterial. The structure design is based on an active region of a quantum cascade laser optimized to achieve optical gain in the Terahertz (THz) spectral range. In particular, we test the GaN/AlGaN quantum well configurations, which should exhibit important advantages compared to GaAs-based structures, namely room temperature operation without the assistance of magnetic field and lower doping densities. Our numerical rate-equations model is solved self-consistently and it takes into account electron-longitudinal optical phonon scattering between all the relevant states among the adjacent periods of the structure. A global optimization routine, specifically genetic algorithm is then used to generate new gain-optimized structures. This work confirms the advantages of cubic GaN designs over GaAs ones, namely feasibility of negative refraction at room ...temperature without the assistance of magnetic field while keeping the doping densities of the same order of magnitude. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Кључне речи:
Quantum cascade structure / Semiconductor metamaterials / Negative refractionИзвор:
Optical and Quantum Electronics, 2018, 50, 10, 373-Финансирање / пројекти:
- Фотоника микро и нано структурних материјала (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45010)
- COST ACTION (MP1204)
- COST ACTION (MP1406)
DOI: 10.1007/s11082-018-1639-1
ISSN: 0306-8919; 1572-817X
WoS: 000446031700001
Scopus: 2-s2.0-85054081351
URI
http://link.springer.com/10.1007/s11082-018-1639-1https://vinar.vin.bg.ac.rs/handle/123456789/7895
Колекције
Институција/група
VinčaTY - JOUR AU - Dubajić, Miloš AU - Daničić, Aleksandar AU - Vuković, Nikola AU - Milanović, Vitomir B. AU - Radovanović, Jelena V. PY - 2018 UR - http://link.springer.com/10.1007/s11082-018-1639-1 UR - https://vinar.vin.bg.ac.rs/handle/123456789/7895 AB - In this work we theoretically investigate a possibility to use cubic nitride based multi-layer periodic nanostructure as a semiconductor metamaterial. The structure design is based on an active region of a quantum cascade laser optimized to achieve optical gain in the Terahertz (THz) spectral range. In particular, we test the GaN/AlGaN quantum well configurations, which should exhibit important advantages compared to GaAs-based structures, namely room temperature operation without the assistance of magnetic field and lower doping densities. Our numerical rate-equations model is solved self-consistently and it takes into account electron-longitudinal optical phonon scattering between all the relevant states among the adjacent periods of the structure. A global optimization routine, specifically genetic algorithm is then used to generate new gain-optimized structures. This work confirms the advantages of cubic GaN designs over GaAs ones, namely feasibility of negative refraction at room temperature without the assistance of magnetic field while keeping the doping densities of the same order of magnitude. © 2018, Springer Science+Business Media, LLC, part of Springer Nature. T2 - Optical and Quantum Electronics T1 - Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range VL - 50 IS - 10 SP - 373 DO - 10.1007/s11082-018-1639-1 ER -
@article{ author = "Dubajić, Miloš and Daničić, Aleksandar and Vuković, Nikola and Milanović, Vitomir B. and Radovanović, Jelena V.", year = "2018", abstract = "In this work we theoretically investigate a possibility to use cubic nitride based multi-layer periodic nanostructure as a semiconductor metamaterial. The structure design is based on an active region of a quantum cascade laser optimized to achieve optical gain in the Terahertz (THz) spectral range. In particular, we test the GaN/AlGaN quantum well configurations, which should exhibit important advantages compared to GaAs-based structures, namely room temperature operation without the assistance of magnetic field and lower doping densities. Our numerical rate-equations model is solved self-consistently and it takes into account electron-longitudinal optical phonon scattering between all the relevant states among the adjacent periods of the structure. A global optimization routine, specifically genetic algorithm is then used to generate new gain-optimized structures. This work confirms the advantages of cubic GaN designs over GaAs ones, namely feasibility of negative refraction at room temperature without the assistance of magnetic field while keeping the doping densities of the same order of magnitude. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.", journal = "Optical and Quantum Electronics", title = "Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range", volume = "50", number = "10", pages = "373", doi = "10.1007/s11082-018-1639-1" }
Dubajić, M., Daničić, A., Vuković, N., Milanović, V. B.,& Radovanović, J. V.. (2018). Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range. in Optical and Quantum Electronics, 50(10), 373. https://doi.org/10.1007/s11082-018-1639-1
Dubajić M, Daničić A, Vuković N, Milanović VB, Radovanović JV. Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range. in Optical and Quantum Electronics. 2018;50(10):373. doi:10.1007/s11082-018-1639-1 .
Dubajić, Miloš, Daničić, Aleksandar, Vuković, Nikola, Milanović, Vitomir B., Radovanović, Jelena V., "Optimization of cubic GaN/AlGaN quantum cascade structures for negative refraction in the THz spectral range" in Optical and Quantum Electronics, 50, no. 10 (2018):373, https://doi.org/10.1007/s11082-018-1639-1 . .