The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET
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The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.
Keywords:
VDMOSFET / gamma ray irradiation / radiation dose / threshold voltage shiftSource:
Nuclear Technology and Radiation Protection, 2018, 33, 1, 81-86Funding / projects:
- Physical and functional effects of radiation interaction with electrotechnical and biological systems (RS-171007)
DOI: 10.2298/NTRP1801081O
ISSN: 1451-3994
WoS: 000436369300009
Scopus: 2-s2.0-85051457066
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http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081Ohttps://vinar.vin.bg.ac.rs/handle/123456789/7784
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VinčaTY - JOUR AU - Obrenović, Marija D. AU - Pejović, Milić M. AU - Lazarević, Đorđe R. AU - Kartalović, Nenad M. PY - 2018 UR - http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O UR - https://vinar.vin.bg.ac.rs/handle/123456789/7784 AB - The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper. T2 - Nuclear Technology and Radiation Protection T1 - The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET VL - 33 IS - 1 SP - 81 EP - 86 DO - 10.2298/NTRP1801081O ER -
@article{ author = "Obrenović, Marija D. and Pejović, Milić M. and Lazarević, Đorđe R. and Kartalović, Nenad M.", year = "2018", abstract = "The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.", journal = "Nuclear Technology and Radiation Protection", title = "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET", volume = "33", number = "1", pages = "81-86", doi = "10.2298/NTRP1801081O" }
Obrenović, M. D., Pejović, M. M., Lazarević, Đ. R.,& Kartalović, N. M.. (2018). The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection, 33(1), 81-86. https://doi.org/10.2298/NTRP1801081O
Obrenović MD, Pejović MM, Lazarević ĐR, Kartalović NM. The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection. 2018;33(1):81-86. doi:10.2298/NTRP1801081O .
Obrenović, Marija D., Pejović, Milić M., Lazarević, Đorđe R., Kartalović, Nenad M., "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET" in Nuclear Technology and Radiation Protection, 33, no. 1 (2018):81-86, https://doi.org/10.2298/NTRP1801081O . .