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Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the ...
Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby ...