Influence of Gamma Radiation on Some Commercial EPROM and EEPROM Components
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This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory ((EPROM)-P-2) components exposed to gamma rays. Results obtained for CMOS-based EPROM (NM27C010) and (EPROM)-P-2 (NM93CS46) components provide evidence that EPROMs have a greater radiation hardness than (EPROMs)-P-2. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in (EPROMs)-P-2 are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
- Ministry of Science and Environmental Protection of the Republic of Serbia 
- Progress in Electromagnetics Research Symposium, Mar 22-26, 2010, Xian, Peoples R China