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dc.creatorPopović, Maja
dc.creatorNovaković, Mirjana M.
dc.creatorŠiljegović, Milorad
dc.creatorBibić, Nataša M.
dc.date.accessioned2018-03-03T14:48:40Z
dc.date.available2018-03-03T14:48:40Z
dc.date.issued2012
dc.identifier.issn0168-583X (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/6957
dc.description.abstractThis paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved.en
dc.rightsrestrictedAccessen
dc.sourceNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atomsen
dc.subjectTitanium nitrideen
dc.subjectIon irradiationen
dc.subjectTEMen
dc.subjectRBSen
dc.subjectXRDen
dc.titleEffects of 200 keV argon ions irradiation on microstructural properties of titanium nitride filmsen
dc.typearticleen
dcterms.abstractНоваковић Мирјана; Поповић Маја; Бибиц, Н.; Шиљеговић Милорад;
dc.citation.volume279
dc.citation.spage144
dc.citation.epage146
dc.identifier.wos000303637500034
dc.identifier.doi10.1016/j.nimb.2011.10.033
dc.citation.rankM21
dc.description.other5th International Conference on Elementary Processes in Atomic Systems (CEPAS), Jun 21-25, 2011, Belgrade, Serbiaen
dc.identifier.scopus2-s2.0-84859581891


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