Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films
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This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 key Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (100) substrates. The TiN films were deposited at the substrate temperature of 150 degrees C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 x 10(15) and 2 x 10(16) ions/cm(2). The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 x 10(16) ions/cm(2). It is also observed that the mean crystallite size decreases with the increasing ion fluence. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:Titanium nitride / Ion irradiation / TEM / RBS / XRD
Source:Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2012, 279, 144-146
- 5th International Conference on Elementary Processes in Atomic Systems (CEPAS), Jun 21-25, 2011, Belgrade, Serbia