Modeling of tunneling times in anisotropic non-magnetic metamaterials

Abstract

Tunneling times in an anisotropic structure composed of alternately placed layers of two linear, dispersive and absorptive materials are analyzed in this paper. For such a structure, a general expression for the relation between the two most common tunneling time definitions, namely the dwell time and the group delay, is obtained. Numerical calculations are performed for a new type of semiconductor metamaterial. The results show a peak position frequency mismatch between the dwell time and the group delay, and between the dwell time and the absorption.