Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo

Stanković, Srboljub; Ilić, Radovan D.; Janković, Ksenija S.; Vasić-Milovanović, Aleksandra; Lončar, Boris B.

doi:10.12693/APhysPolA.120.252

2011

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Autori

Stanković, Srboljub

Ilić, Radovan D.
Janković, Ksenija S.

Vasić-Milovanović, Aleksandra

Lončar, Boris B.

Članak u časopisu (Objavljena verzija)

Metapodaci

Prikaz svih podataka o dokumentu

Apstrakt

This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.

Izvor:
Acta Physica Polonica A, 2011, 120, 2, 252-255

Finansiranje / projekti:

Istraživanje mogućnosti primene otpadnih i recikliranih materijala u betonskim kompozitima, sa ocenom uticaja na životnu sredinu, u cilju promocije održivog građevinarstva u srbiji (RS-MESTD-Technological Development (TD or TR)-36017)
Nove tehnologije za monitoring i zaštitu životnog okruženja od štetnih hemijskih supstanci i radijacionog opterećenja (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43009)
Fizički i funkcionalni efekti interakcije zračenja sa elektrotehničkim i biološkim sistemima (RS-MESTD-Basic Research (BR or ON)-171007)

Napomena:

12th Annual YUCOMAT Conference, Sep 06-10, 2010, Herceg Novi, Montenegro

DOI: 10.12693/APhysPolA.120.252

ISSN: 0587-4246

WoS: 000291836900011

Scopus: 2-s2.0-79960142290

[ Google Scholar ]


	3
	3

TY  - JOUR
AU  - Stanković, Srboljub
AU  - Ilić, Radovan D.
AU  - Janković, Ksenija S.
AU  - Vasić-Milovanović, Aleksandra
AU  - Lončar, Boris B.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6918
AB  - This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
T2  - Acta Physica Polonica A
T1  - Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo
VL  - 120
IS  - 2
SP  - 252
EP  - 255
DO  - 10.12693/APhysPolA.120.252
ER  -

@article{
author = "Stanković, Srboljub and Ilić, Radovan D. and Janković, Ksenija S. and Vasić-Milovanović, Aleksandra and Lončar, Boris B.",
year = "2011",
abstract = "This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.",
journal = "Acta Physica Polonica A",
title = "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo",
volume = "120",
number = "2",
pages = "252-255",
doi = "10.12693/APhysPolA.120.252"
}

Stanković, S., Ilić, R. D., Janković, K. S., Vasić-Milovanović, A.,& Lončar, B. B.. (2011). Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A, 120(2), 252-255.
https://doi.org/10.12693/APhysPolA.120.252

Stanković S, Ilić RD, Janković KS, Vasić-Milovanović A, Lončar BB. Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo. in Acta Physica Polonica A. 2011;120(2):252-255.
doi:10.12693/APhysPolA.120.252 .

Stanković, Srboljub, Ilić, Radovan D., Janković, Ksenija S., Vasić-Milovanović, Aleksandra, Lončar, Boris B., "Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo" in Acta Physica Polonica A, 120, no. 2 (2011):252-255,
https://doi.org/10.12693/APhysPolA.120.252 . .